제조사부품번호

Infineon IPTG Type N-Channel MOSFET, 408 A, 80 V Enhancement, 8-Pin HSOG IPTG011N08NM5ATMA1

RS 제품 번호:: 233-4385
제조사 부품 번호:: IPTG011N08NM5ATMA1
제조업체:: Infineon

Infineon IPTG Type N-Channel MOSFET, 408 A, 80 V Enhancement, 8-Pin HSOG IPTG011N08NM5ATMA1

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대량 구매 할인 기용 가능

Subtotal (1 pack of 2 units)*

₩22,390.80

일시적 품절

2026년 3월 26일 부터 1,782 개 단위 배송

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수량	한팩당	한팩당*
2 - 8	₩11,195.40	₩22,390.80
10 - 98	₩10,979.20	₩21,958.40
100 - 248	₩10,744.20	₩21,488.40
250 - 498	₩10,537.40	₩21,074.80
500 +	₩10,321.20	₩20,642.40

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 233-4385
제조사 부품 번호:: IPTG011N08NM5ATMA1
제조업체:: Infineon

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	408A
	Maximum Drain Source Voltage Vds	80V
	Series	IPTG
	Package Type	HSOG
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	1.1mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	178nC
	Maximum Power Dissipation Pd	375W
	Maximum Operating Temperature	175°C
	Height	2.4mm
	Width	8.75 mm
	Length	10.1mm
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 408A
	Maximum Drain Source Voltage Vds 80V
	Series IPTG
	Package Type HSOG
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 1.1mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 178nC
	Maximum Power Dissipation Pd 375W
	Maximum Operating Temperature 175°C
	Height 2.4mm
	Width 8.75 mm
	Length 10.1mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPTG011N08NM5ATMA1

The Infineon OptiMOS power MOSFET IPTG011N08NM5 comes in the improved TO-Leaded package with gullwing leads. With a compatible footprint to TO-Leadless, TOLG allows excellent electrical performance compared to D2PAK 7-pin with ∼60 percent board space reduction. This new package in OptiMOS 5 - 80 V offers very low RDS(on) and is optimized to handle high current 300 A. The flexibility of gullwing leads, OptiMOS in TOLG package shows excellent solder joint reliability on Al-IMS board. This result in 2x higher thermal cycling on board

High efficiency and lower EMI

High performance capability

Infineon IPTG Type N-Channel MOSFET, 408 A, 80 V Enhancement, 8-Pin HSOG IPTG011N08NM5ATMA1

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