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onsemi SUPERFET V Type N-Channel MOSFET, 57 A, 600 V Enhancement, 3-Pin TO-247

RS 제품 번호:: 230-9086
제조사 부품 번호:: NTHL041N60S5H
제조업체:: onsemi

onsemi SUPERFET V Type N-Channel MOSFET, 57 A, 600 V Enhancement, 3-Pin TO-247

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대량 구매 할인 기용 가능

Subtotal (1 tube of 450 units)*

₩4,219,848.00

일시적 품절

2026년 5월 11일 부터 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	Per Tube*
450 - 450	₩9,377.44	₩4,219,848.00
900 - 4050	₩9,354.88	₩4,210,119.00
4500 +	₩9,168.76	₩4,125,942.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 230-9086
제조사 부품 번호:: NTHL041N60S5H
제조업체:: onsemi

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모두 선택	제품 정보	값
	브랜드	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	57A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-247
	Series	SUPERFET V
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	41mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	108nC
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Power Dissipation Pd	329W
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	175°C
	Length	15.87mm
	Standards/Approvals	Pb-Free, RoHS
	Height	41.07mm
	Width	4.82 mm
	Automotive Standard	No

	모두 선택
	브랜드 onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 57A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-247
	Series SUPERFET V
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 41mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 108nC
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Power Dissipation Pd 329W
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 175°C
	Length 15.87mm
	Standards/Approvals Pb-Free, RoHS
	Height 41.07mm
	Width 4.82 mm
	Automotive Standard No

Datasheet - NTHL041N60S5H

The ON Semiconductor series SUPERFET V MOSFET is the fifth generation high voltage super−junction (SJ) MOSFET family from ON Semiconductor. SUPERFET V delivers best−in−class FOMs (RDS(ON)·QG and RDS(ON)·EOSS) to improve not only heavy load but also light load efficiency. The 600 V SUPERET V series provides design benefits through reduced conduction and switching losses, while supporting extreme MOSFET dVDS/dt ratings at 120 V/ns. Consequently, the SUPERFET V MOSFET FAST series helps maximize system efficiency and power density.

100% Avalanche Tested

RoHS Compliant

Typ. RDS(on) = 32.8 mΩ

Internal Gate Resistance: 0.6 Ω

Ultra Low Gate Charge (Typ. Qg = 108 nC)

onsemi SUPERFET V Type N-Channel MOSFET, 57 A, 600 V Enhancement, 3-Pin TO-247

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