onsemi NTHL Type N-Channel MOSFET, 46 A, 650 V Enhancement, 3-Pin TO-247
- RS 제품 번호:
- 178-4255
- 제조사 부품 번호:
- NTHL065N65S3F
- 제조업체:
- onsemi
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대량 구매 할인 기용 가능
Subtotal (1 tube of 30 units)*
₩326,217.60
일시적 품절
- 1,770 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tube* |
|---|---|---|
| 30 - 30 | ₩10,873.92 | ₩326,217.60 |
| 60 - 90 | ₩10,637.04 | ₩319,128.12 |
| 120 + | ₩10,400.16 | ₩312,021.72 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 178-4255
- 제조사 부품 번호:
- NTHL065N65S3F
- 제조업체:
- onsemi
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 46A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | NTHL | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 337W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 98nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 15.87mm | |
| Width | 4.82 mm | |
| Standards/Approvals | No | |
| Height | 20.82mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 46A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series NTHL | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 337W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 98nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 15.87mm | ||
Width 4.82 mm | ||
Standards/Approvals No | ||
Height 20.82mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.
Features:
700V@TJ=150
Ultra Low Gate Charge (Typ.Qg=98nC)
Low Effective Output Capacitance (Typ.Coss (eff.)=876pF)
Excellent body diode performance (lowQrr,robust body diode)
Optimized Capacitance
Typ. RDS(on)=54mΩ
Benefits:
Higher system reliability at low temperature operation
Lower switching loss
Higher system reliability in LLC and Phase shift fullbridge circuit
Lower peak Vds and lower Vgs oscillation
Applications:
Telecommunication
Cloud system
Industrial
End Products:
Telecom power
Server power
EV charger
Solar/UPS
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