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onsemi NTHL N-Channel MOSFET, 46 A, 650 V Enhancement, 3-Pin TO-247

RS 제품 번호:: 178-4255
제조사 부품 번호:: NTHL065N65S3F
제조업체:: onsemi

onsemi NTHL N-Channel MOSFET, 46 A, 650 V Enhancement, 3-Pin TO-247

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RS 제품 번호:: 178-4255
제조사 부품 번호:: NTHL065N65S3F
제조업체:: onsemi

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제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	onsemi
	Series	NTHL
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current (Id)	46 A
	Maximum Drain Source Voltage (Vds)	650 V
	Channel Mode	Enhancement
	Pin Count	3
	Package Type	TO-247
	Automotive Standard	No
	Forward Voltage (Vf)	1.3 V
	Height	20.82 mm
	Length	15.87 mm
	Maximum Drain Source Resistance (Rds)	65 mΩ
	Maximum Gate Source Voltage (Vgs)	30 V
	Maximum Operating Temperature	150 °C
	Maximum Power Dissipation (Pd)	337 W
	Minimum Operating Temperature	-55 °C
	Mount Type	Through Hole
	Standards/Approvals	No
	Typical Gate Charge (Qg) @ Vgs	98 nC
	Width	4.82 mm

	모두 선택
	브랜드 onsemi
	Series NTHL
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current (Id) 46 A
	Maximum Drain Source Voltage (Vds) 650 V
	Channel Mode Enhancement
	Pin Count 3
	Package Type TO-247
	Automotive Standard No
	Forward Voltage (Vf) 1.3 V
	Height 20.82 mm
	Length 15.87 mm
	Maximum Drain Source Resistance (Rds) 65 mΩ
	Maximum Gate Source Voltage (Vgs) 30 V
	Maximum Operating Temperature 150 °C
	Maximum Power Dissipation (Pd) 337 W
	Minimum Operating Temperature -55 °C
	Mount Type Through Hole
	Standards/Approvals No
	Typical Gate Charge (Qg) @ Vgs 98 nC
	Width 4.82 mm

COO (Country of Origin):: CN

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.

Features:

700V@T_J=150

Ultra Low Gate Charge (Typ.Qg=98nC)

Low Effective Output Capacitance (Typ.Coss (eff.)=876pF)

Excellent body diode performance (lowQrr,robust body diode)

Optimized Capacitance

Typ. RDS(on)=54mΩ

Benefits:

Higher system reliability at low temperature operation

Lower switching loss

Higher system reliability in LLC and Phase shift fullbridge circuit

Lower peak Vds and lower Vgs oscillation

Applications:

Telecommunication

Cloud system

Industrial

End Products:

Telecom power

Server power

EV charger

Solar/UPS

onsemi NTHL N-Channel MOSFET, 46 A, 650 V Enhancement, 3-Pin TO-247

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