onsemi SuperFET III MOSFET Easy-drive N-Channel MOSFET, 44 A, 650 V Enhancement, 3-Pin TO-247 NVHL072N65S3
- RS 제품 번호:
- 186-1537
- 제조사 부품 번호:
- NVHL072N65S3
- 제조업체:
- onsemi
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대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (2 units, in packs of 2)*
₩28,260.00
일시적 품절
- 2027년 5월 03일 부터 배송
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수량 | 한팩당 | 한팩당* |
|---|---|---|
| 2 - 112 | ₩14,130.00 | ₩28,260.00 |
| 114 - 224 | ₩13,770.00 | ₩27,540.00 |
| 226 + | ₩13,580.00 | ₩27,160.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 186-1537
- 제조사 부품 번호:
- NVHL072N65S3
- 제조업체:
- onsemi
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 44A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SuperFET III MOSFET Easy-drive | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 107mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 312W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 82nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 20.82mm | |
| Standards/Approvals | No | |
| Width | 4.82mm | |
| Length | 15.87mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 44A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SuperFET III MOSFET Easy-drive | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 107mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 312W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 82nC | ||
Maximum Operating Temperature 150°C | ||
Height 20.82mm | ||
Standards/Approvals No | ||
Width 4.82mm | ||
Length 15.87mm | ||
Automotive Standard AEC-Q101 | ||
SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.
700 V @ TJ = 150°C
Ultra Low Gate Charge (Typ. Qg = 78 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 715 pF)
PPAP Capable
Typ. RDS(on) = 63 mΩ
Higher system reliability at low temperature operation
Lower switching loss
PPAP Capable
Applications
HV DC/DC converter
End Products
On Board Charger
DC/DC Converter
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