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onsemi SUPERFET V Type N-Channel MOSFET, 33 A, 600 V Enhancement, 3-Pin TO-247 NTHL099N60S5

RS 제품 번호:: 230-9089
제조사 부품 번호:: NTHL099N60S5
제조업체:: onsemi

onsemi SUPERFET V Type N-Channel MOSFET, 33 A, 600 V Enhancement, 3-Pin TO-247 NTHL099N60S5

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Subtotal (1 unit)*

₩8,742.00

재고있음

추가로 2025년 12월 29일 부터 274 개 단위 배송

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수량	한팩당
1 - 9	₩8,742.00
10 - 49	₩8,497.60
50 - 99	₩8,234.40
100 - 249	₩7,971.20
250 +	₩7,745.60

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 230-9089
제조사 부품 번호:: NTHL099N60S5
제조업체:: onsemi

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모두 선택	제품 정보	값
	브랜드	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	33A
	Maximum Drain Source Voltage Vds	600V
	Series	SUPERFET V
	Package Type	TO-247
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	99mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	184W
	Typical Gate Charge Qg @ Vgs	48nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	30 V
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	175°C
	Height	41.07mm
	Width	4.82 mm
	Standards/Approvals	No
	Length	15.87mm
	Automotive Standard	No

	모두 선택
	브랜드 onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 33A
	Maximum Drain Source Voltage Vds 600V
	Series SUPERFET V
	Package Type TO-247
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 99mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 184W
	Typical Gate Charge Qg @ Vgs 48nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 30 V
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 175°C
	Height 41.07mm
	Width 4.82 mm
	Standards/Approvals No
	Length 15.87mm
	Automotive Standard No

Datasheet - NTHL099N60S5

The ON Semiconductor series SUPERFET V MOSFET is the fifth generation high voltage super−junction (SJ) MOSFET family from ON Semiconductor. SUPERFET V delivers best−in−class FOMs (RDS(ON)·QG and RDS(ON)·EOSS) to improve not only heavy load but also light load efficiency. The 600 V SUPERET V series provides design benefits through reduced conduction and switching losses, while supporting extreme MOSFET dVDS/dt ratings at 120 V/ns and high body diode dVDS/dt ratings at 50 V/ns. Consequently, the SUPERFET V MOSFET Easy Drive series combines excellent switching performance without sacrificing ease of use for both hard and soft switching topologies. It helps manage EMI issues and allows for easier design implementation with excellent system efficiency.

Ultra Low Gate Charge (Typ. Qg= 48 nC)

Low switching loss

Low Time Related Output Capacitance (Typ. Coss(tr.)= 642 pF)

Low switching loss

Optimized Capacitance

Lower peak Vds and lower Vgs oscillation

650 V @ TJ = 150°C

Typ. RDS(on) = 79.2 m Ω

100% Avalanche Tested

RoHS Compliant

Internal Gate Resistance: 6.9 Ω

onsemi SUPERFET V Type N-Channel MOSFET, 33 A, 600 V Enhancement, 3-Pin TO-247 NTHL099N60S5

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