onsemi NTHL Type N-Channel MOSFET, 65 A, 650 V Enhancement, 3-Pin TO-247
- RS 제품 번호:
- 195-2500
- 제조사 부품 번호:
- NTHL040N65S3HF
- 제조업체:
- onsemi
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RS는 이 제품을 더 이상 판매하지 않습니다.
- RS 제품 번호:
- 195-2500
- 제조사 부품 번호:
- NTHL040N65S3HF
- 제조업체:
- onsemi
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 65A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Series | NTHL | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 40mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 159nC | |
| Maximum Power Dissipation Pd | 446W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 150°C | |
| Height | 20.82mm | |
| Standards/Approvals | No | |
| Length | 15.87mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 65A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Series NTHL | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 40mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 159nC | ||
Maximum Power Dissipation Pd 446W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 150°C | ||
Height 20.82mm | ||
Standards/Approvals No | ||
Length 15.87mm | ||
Automotive Standard No | ||
SUPERFET III MOSFET is ON Semiconductors brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFETs optimized reverse recovery performance of body diode can remove additional component and improve system reliability.
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