onsemi SiC Power Type N-Channel MOSFET, 55 A, 650 V N, 4-Pin TO-247
- RS 제품 번호:
- 229-6459
- 제조사 부품 번호:
- NTH4L045N065SC1
- 제조업체:
- onsemi
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 tube of 450 units)*
₩5,586,138.00
일시적 품절
- 2026년 4월 27일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tube* |
|---|---|---|
| 450 - 900 | ₩12,413.64 | ₩5,586,476.40 |
| 1350 - 1800 | ₩12,165.48 | ₩5,474,804.40 |
| 2250 + | ₩11,922.96 | ₩5,365,247.40 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 229-6459
- 제조사 부품 번호:
- NTH4L045N065SC1
- 제조업체:
- onsemi
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SiC Power | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 50mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 4.4V | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 105nC | |
| Maximum Power Dissipation Pd | 187W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 22.74mm | |
| Length | 15.8mm | |
| Width | 5.2 mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SiC Power | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 50mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 4.4V | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 105nC | ||
Maximum Power Dissipation Pd 187W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 22.74mm | ||
Length 15.8mm | ||
Width 5.2 mm | ||
Automotive Standard No | ||
The ON Semiconductor SiC Power series MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.
Highest efficiency
Faster operation frequency
Increased power density
Reduced EMI
Reduced system size
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