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onsemi NTH Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 7-Pin TO-247 NTH4L025N065SC1

RS 제품 번호:: 254-7670
제조사 부품 번호:: NTH4L025N065SC1
제조업체:: onsemi

onsemi NTH Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 7-Pin TO-247 NTH4L025N065SC1

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Subtotal (1 unit)*

₩29,365.60

재고있음

440 개 단위 배송 준비 완료

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수량	한팩당
1 - 9	₩29,365.60
10 - 99	₩27,072.00
100 - 249	₩25,850.00
250 - 349	₩25,323.60
350 +	₩24,834.80

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 254-7670
제조사 부품 번호:: NTH4L025N065SC1
제조업체:: onsemi

참조 문서

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제품 세부 사항

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모두 선택	제품 정보	값
	브랜드	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	58A
	Maximum Drain Source Voltage Vds	1200V
	Package Type	TO-247
	Series	NTH
	Mount Type	Through Hole
	Pin Count	7
	Maximum Drain Source Resistance Rds	22mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	4.5V
	Typical Gate Charge Qg @ Vgs	164nC
	Maximum Gate Source Voltage Vgs	22 V
	Maximum Power Dissipation Pd	117W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS with exemption 7a, Pb-Free 2LI
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 58A
	Maximum Drain Source Voltage Vds 1200V
	Package Type TO-247
	Series NTH
	Mount Type Through Hole
	Pin Count 7
	Maximum Drain Source Resistance Rds 22mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 4.5V
	Typical Gate Charge Qg @ Vgs 164nC
	Maximum Gate Source Voltage Vgs 22 V
	Maximum Power Dissipation Pd 117W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS with exemption 7a, Pb-Free 2LI
	Automotive Standard AEC-Q101

Datasheet - NTH4L025N065SC1

Silicon Carbide (SiC) MOSFET - EliteSiC, 19 mohm, 650 V, M2, TO-247-4L Silicon Carbide (SiC) MOSFET - 19 mohm, 650 V, M2, TO247−4L

The ON Semiconductor NTH series of a silicon carbide mosfet uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition with the low on resistance and compact chip size. It ensures a low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Used in telecommunication

Ultra low gate charge

High speed switching and low capacitance

onsemi NTH Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 7-Pin TO-247 NTH4L025N065SC1

Silicon Carbide (SiC) MOSFET - EliteSiC, 19 mohm, 650 V, M2, TO-247-4L Silicon Carbide (SiC) MOSFET - 19 mohm, 650 V, M2, TO247−4L

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