onsemi SiC Power Type N-Channel MOSFET, 62 A, 650 V N, 7-Pin TO-263
- RS 제품 번호:
- 229-6443
- 제조사 부품 번호:
- NTBG045N065SC1
- 제조업체:
- onsemi
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대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 reel of 800 units)*
₩11,397,360.00
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 800 - 1600 | ₩14,246.70 | ₩11,396,580.00 |
| 2400 - 3200 | ₩13,960.05 | ₩11,168,664.00 |
| 4000 + | ₩13,681.20 | ₩10,945,272.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 229-6443
- 제조사 부품 번호:
- NTBG045N065SC1
- 제조업체:
- onsemi
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 62A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-263 | |
| Series | SiC Power | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 50mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 4.8V | |
| Typical Gate Charge Qg @ Vgs | 105nC | |
| Maximum Power Dissipation Pd | 242W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 9.4mm | |
| Length | 10.2mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 62A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-263 | ||
Series SiC Power | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 50mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 4.8V | ||
Typical Gate Charge Qg @ Vgs 105nC | ||
Maximum Power Dissipation Pd 242W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 9.4mm | ||
Length 10.2mm | ||
Automotive Standard No | ||
The ON Semiconductor SiC Power series MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.
Highest efficiency
Faster operation frequency
Increased power density
Reduced EMI
Reduced system size
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