onsemi NTH Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 4-Pin TO-247 NTH4L060N065SC1
- RS 제품 번호:
- 248-5816
- 제조사 부품 번호:
- NTH4L060N065SC1
- 제조업체:
- onsemi
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 unit)*
₩14,175.20
마지막 RS 재고
- 최종적인 442 개 unit(s)이 배송 준비 됨
수량 | 한팩당 |
|---|---|
| 1 - 1 | ₩14,175.20 |
| 2 - 4 | ₩13,836.80 |
| 5 - 9 | ₩13,498.40 |
| 10 - 14 | ₩13,178.80 |
| 15 + | ₩12,859.20 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 248-5816
- 제조사 부품 번호:
- NTH4L060N065SC1
- 제조업체:
- onsemi
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 58A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-247 | |
| Series | NTH | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 74nC | |
| Maximum Power Dissipation Pd | 117W | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 58A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-247 | ||
Series NTH | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 74nC | ||
Maximum Power Dissipation Pd 117W | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, TO-247-4L
The ON Semiconductor Silicon Carbide (SiC) MOSFET is a N channel MOSFET with 650 V drain to source voltage and 176 W power dissipation, TO247-4L packaging and this device is Halide free and RoHS compliant with exemption 7a, Pb−Free 2LI.
Ultra low gate charge 74 nC
Low capacitance 133 pF
100 percent avalanche tested
Temperature 175°C
RDS(on) 44 mohm
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