onsemi SiC Power Type N-Channel MOSFET, 62 A, 650 V N, 7-Pin TO-263 NTBG045N065SC1
- RS 제품 번호:
- 229-6444
- 제조사 부품 번호:
- NTBG045N065SC1
- 제조업체:
- onsemi
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 unit)*
₩16,863.60
재고있음
- 728 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 |
|---|---|
| 1 - 9 | ₩16,863.60 |
| 10 - 99 | ₩16,374.80 |
| 100 - 249 | ₩15,848.40 |
| 250 - 499 | ₩15,510.00 |
| 500 + | ₩15,171.60 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 229-6444
- 제조사 부품 번호:
- NTBG045N065SC1
- 제조업체:
- onsemi
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 62A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-263 | |
| Series | SiC Power | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 50mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 105nC | |
| Forward Voltage Vf | 4.8V | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Power Dissipation Pd | 242W | |
| Maximum Operating Temperature | 175°C | |
| Height | 9.4mm | |
| Width | 4.7 mm | |
| Length | 10.2mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 62A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-263 | ||
Series SiC Power | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 50mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 105nC | ||
Forward Voltage Vf 4.8V | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Power Dissipation Pd 242W | ||
Maximum Operating Temperature 175°C | ||
Height 9.4mm | ||
Width 4.7 mm | ||
Length 10.2mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ON Semiconductor SiC Power series MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.
Highest efficiency
Faster operation frequency
Increased power density
Reduced EMI
Reduced system size
관련된 링크들
- onsemi SiC Power Type N-Channel MOSFET, 62 A, 650 V N, 7-Pin TO-263
- onsemi SiC Power Type N-Channel MOSFET, 145 A, 650 V N, 7-Pin TO-263 NTBG015N065SC1
- onsemi SiC Power Type N-Channel MOSFET, 145 A, 650 V N, 7-Pin TO-263
- onsemi SiC Power Type N-Channel MOSFET, 55 A, 650 V N, 4-Pin TO-247 NTH4L045N065SC1
- onsemi NTB Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 7-Pin TO-263 NTBG025N065SC1
- onsemi NTB Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 7-Pin TO-263 NTBG060N065SC1
- onsemi NTB Type N-Channel MOSFET, 70 A, 650 V Enhancement, 7-Pin TO-263 NTBG023N065M3S
- onsemi SiC Power Type N-Channel MOSFET, 55 A, 650 V N, 4-Pin TO-247