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onsemi NTB Type N-Channel MOSFET, 70 A, 650 V Enhancement, 7-Pin TO-263 NTBG023N065M3S

RS 제품 번호:: 277-040
제조사 부품 번호:: NTBG023N065M3S
제조업체:: onsemi

onsemi NTB Type N-Channel MOSFET, 70 A, 650 V Enhancement, 7-Pin TO-263 NTBG023N065M3S

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Subtotal (1 unit)*

₩14,404.56

재고있음

800 개 단위 배송 준비 완료

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수량	한팩당
1 - 9	₩14,404.56
10 - 99	₩12,968.24
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500 - 999	₩11,095.76
1000 +	₩9,012.72

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RS 제품 번호:: 277-040
제조사 부품 번호:: NTBG023N065M3S
제조업체:: onsemi

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모두 선택	제품 정보	값
	브랜드	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	70A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-263
	Series	NTB
	Mount Type	Surface
	Pin Count	7
	Maximum Drain Source Resistance Rds	23mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	6V
	Maximum Power Dissipation Pd	263W
	Typical Gate Charge Qg @ Vgs	69nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	22 V
	Maximum Operating Temperature	175°C
	Width	9.9 mm
	Standards/Approvals	RoHS with exemption 7a, Pb-Free 2LI (on Second Level Interconnection)
	Length	9.2mm
	Height	15.4mm
	Automotive Standard	No

	모두 선택
	브랜드 onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 70A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-263
	Series NTB
	Mount Type Surface
	Pin Count 7
	Maximum Drain Source Resistance Rds 23mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 6V
	Maximum Power Dissipation Pd 263W
	Typical Gate Charge Qg @ Vgs 69nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 22 V
	Maximum Operating Temperature 175°C
	Width 9.9 mm
	Standards/Approvals RoHS with exemption 7a, Pb-Free 2LI (on Second Level Interconnection)
	Length 9.2mm
	Height 15.4mm
	Automotive Standard No

Datasheet - NTBG023N065M3S

COO (Country of Origin):: CN

The ON Semiconductor SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This has optimum performance when driven with 18V gate drive but also works well with 15V gate drive.

Ultra low gate charge

High speed switching with low capacitance

100% avalanche tested

Device is Halide Free and RoHS compliant

onsemi NTB Type N-Channel MOSFET, 70 A, 650 V Enhancement, 7-Pin TO-263 NTBG023N065M3S

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