onsemi SiC Power Type N-Channel MOSFET, 145 A, 650 V N, 7-Pin TO-263 NTBG015N065SC1
- RS 제품 번호:
- 229-6442
- 제조사 부품 번호:
- NTBG015N065SC1
- 제조업체:
- onsemi
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대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 unit)*
₩38,610.00
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 |
|---|---|
| 1 - 9 | ₩38,610.00 |
| 10 - 99 | ₩37,459.50 |
| 100 - 249 | ₩36,289.50 |
| 250 - 499 | ₩35,529.00 |
| 500 + | ₩34,749.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 229-6442
- 제조사 부품 번호:
- NTBG015N065SC1
- 제조업체:
- onsemi
사양
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 145A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SiC Power | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 18mΩ | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 500W | |
| Forward Voltage Vf | 4.8V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 283nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 9.4mm | |
| Length | 10.2mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 145A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SiC Power | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 18mΩ | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 500W | ||
Forward Voltage Vf 4.8V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 283nC | ||
Maximum Operating Temperature 175°C | ||
Height 9.4mm | ||
Length 10.2mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ON Semiconductor SiC Power series MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.
Highest efficiency
Faster operation frequency
Increased power density
Reduced EMI
Reduced system size
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