Infineon IPT010N08NM5 N-Channel MOSFET, 43 A, 80 V, 8-Pin HSOF IPT010N08NM5ATMA1

RS 제품 번호:: 225-0582
제조사 부품 번호:: IPT010N08NM5ATMA1
제조업체:: Infineon

Infineon IPT010N08NM5 N-Channel MOSFET, 43 A, 80 V, 8-Pin HSOF IPT010N08NM5ATMA1

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Subtotal (1 pack of 2 units)*

₩27,560.00

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수량	한팩당	한팩당*
2 - 8	₩13,780.00	₩27,560.00
10 - 98	₩13,540.00	₩27,080.00
100 - 248	₩13,300.00	₩26,600.00
250 - 498	₩13,050.00	₩26,100.00
500 +	₩12,820.00	₩25,640.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 225-0582
제조사 부품 번호:: IPT010N08NM5ATMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	43A
	Maximum Drain Source Voltage Vds	80V
	Series	IPT010N08NM5
	Package Type	HSOF
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	1.05mΩ
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	178nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1V
	Maximum Power Dissipation Pd	375W
	Maximum Operating Temperature	175°C
	Height	2.4mm
	Length	10.1mm
	Standards/Approvals	No
	Width	10.58mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 43A
	Maximum Drain Source Voltage Vds 80V
	Series IPT010N08NM5
	Package Type HSOF
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 1.05mΩ
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 178nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1V
	Maximum Power Dissipation Pd 375W
	Maximum Operating Temperature 175°C
	Height 2.4mm
	Length 10.1mm
	Standards/Approvals No
	Width 10.58mm
	Automotive Standard No

Datasheet-IPT010N08NM5ATMA1

Infineon IPT010N08NM5 Series MOSFET, 80V Drain Source Voltage, 43A Continuous Drain Current - IPT010N08NM5ATMA1

This MOSFET is a semiconductor switching device designed for high-current, high-voltage applications in surface-mounted assemblies. It operates across a wide temperature span and is intended for power conversion, switching and drive circuits that require robust drain-source performance and substantial power handling.

Features and Benefits:

• Low on-resistance delivers reduced conduction losses at high currents
• High drain-source voltage enables operation at 80 V system rails
• High continuous drain current allows sustained 43 A load handling
• High power dissipation supports up to 375 W thermal loading
• Typical gate charge of 178 nC permits predictable switching energetics

Applications

• Suitable for DC-DC converter switching stages
• Ideal for motor-drive half-bridge configurations
• Used with power supplies requiring high current handling
• Can be used for synchronous rectification in converters

What gate voltage limits must be observed during circuit design?

The gate must not be driven beyond a maximum of 20 V to avoid gate-source overstress.

What thermal environment range can it withstand in operation?

It is specified to function from −55 °C up to 175 °C enabling use across extreme temperature conditions.

How many pins are available for PCB routing and connections?

There are eight pins for layout and electrical connection in the surface-mount footprint.

What package type should be accounted for when designing the PCB footprint?

The component uses an HSOF package intended for surface mounting and board attachment.

What is the typical conduction resistance to consider for efficiency calculations?

Expect a maximum drain-source resistance of around 1.05 mΩ for loss estimations.