Infineon IPP60R Type N-Channel MOSFET, 35 A, 600 V Enhancement, 3-Pin TO-220 IPP60R060C7XKSA1
- RS 제품 번호:
- 222-4926
- 제조사 부품 번호:
- IPP60R060C7XKSA1
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 pack of 2 units)*
₩21,391.50
재고있음
- 추가로 2026년 5월 11일 부터 946 개 단위 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 2 - 8 | ₩10,695.75 | ₩21,391.50 |
| 10 - 98 | ₩10,432.50 | ₩20,865.00 |
| 100 - 248 | ₩10,188.75 | ₩20,377.50 |
| 250 - 498 | ₩9,945.00 | ₩19,890.00 |
| 500 + | ₩9,701.25 | ₩19,402.50 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 222-4926
- 제조사 부품 번호:
- IPP60R060C7XKSA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 35A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | IPP60R | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 60mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 68nC | |
| Maximum Power Dissipation Pd | 162W | |
| Maximum Operating Temperature | 150°C | |
| Height | 9.45mm | |
| Length | 10.36mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 35A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series IPP60R | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 60mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 68nC | ||
Maximum Power Dissipation Pd 162W | ||
Maximum Operating Temperature 150°C | ||
Height 9.45mm | ||
Length 10.36mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ∼50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs.
Reduced switching loss parameters such as Q G, C oss, E oss
Best-in-class figure of merit Q G*R DS(on)
Increased switching frequency
Best R (on)*A in the world
Rugged body diode
관련된 링크들
- Infineon IPP60R Type N-Channel MOSFET, 35 A, 600 V Enhancement, 3-Pin TO-220
- Infineon IPP60R Type N-Channel MOSFET, 26 A, 600 V Enhancement, 3-Pin TO-220 IPP60R120P7XKSA1
- Infineon IPP60R Type N-Channel MOSFET, 23 A, 600 V Enhancement, 3-Pin TO-220 IPP60R022S7XKSA1
- Infineon IPP Type N-Channel MOSFET, 36.23 A, 700 V Enhancement, 3-Pin PG-TO220-3 IPP65R060CFD7XKSA1
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 48 A, 600 V Enhancement, 3-Pin TO-220 IPP60R060P7XKSA1
- Infineon IPP60R Type N-Channel MOSFET, 23 A, 600 V Enhancement, 3-Pin TO-220
- Infineon IPP60R Type N-Channel MOSFET, 26 A, 600 V Enhancement, 3-Pin TO-220
- Infineon IPP Type N-Channel MOSFET, 135 A, 600 V Enhancement, 3-Pin PG-TO220-3 IPP60R016CM8XKSA1