Infineon IPP Type N-Channel MOSFET, 135 A, 600 V Enhancement, 3-Pin PG-TO220-3 IPP60R016CM8XKSA1
- RS 제품 번호:
- 349-000
- 제조사 부품 번호:
- IPP60R016CM8XKSA1
- 제조업체:
- Infineon
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 unit)*
₩27,940.00
재고있음
- 497 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 |
|---|---|
| 1 - 9 | ₩27,940.00 |
| 10 - 99 | ₩25,140.00 |
| 100 + | ₩23,160.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 349-000
- 제조사 부품 번호:
- IPP60R016CM8XKSA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 135A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | IPP | |
| Package Type | PG-TO220-3 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 16mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 625W | |
| Forward Voltage Vf | 0.9V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 171nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC, RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 135A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series IPP | ||
Package Type PG-TO220-3 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 16mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 625W | ||
Forward Voltage Vf 0.9V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 171nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC, RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
Infineon IPP Series MOSFET, 600V Drain Source Voltage, 135A Continuous Drain Current - IPP60R016CM8XKSA1
This MOSFET is a high-voltage N-channel transistor designed for power switching and control in demanding electronic systems. It operates across a wide temperature span suitable for harsh environments and is supplied in a through-hole TO-220 package for straightforward heatsinking and board mounting. The device conforms to standard semiconductor approvals and is intended for applications requiring substantial current handling and thermal endurance.
Features and Benefits:
• 600V rating enables high-voltage switching applications
• 135A continuous drain current supports heavy load currents
• 16mΩ maximum Rds(on) reduces conduction losses under load
• 625W maximum power dissipation allows elevated thermal loading
• 171nC typical gate charge aids predictable switching behaviour
• Vgs±30V tolerance permits robust gate-drive margins
• 135A continuous drain current supports heavy load currents
• 16mΩ maximum Rds(on) reduces conduction losses under load
• 625W maximum power dissipation allows elevated thermal loading
• 171nC typical gate charge aids predictable switching behaviour
• Vgs±30V tolerance permits robust gate-drive margins
Applications
• Suitable for mains-level power converters and inverters
• Ideal for industrial motor drive switching stages
• Used with high-current DC-DC conversion modules
• Can be used for electronic load and power test equipment
• Suitable for power supplies in telecommunications infrastructure
• Ideal for industrial motor drive switching stages
• Used with high-current DC-DC conversion modules
• Can be used for electronic load and power test equipment
• Suitable for power supplies in telecommunications infrastructure
What ambient extremes can it withstand in operation?
It is rated for continuous operation from -55°C up to 175°C, permitting use in both cold-start and high-temperature environments.
How many pins and what mounting style are provided?
The device uses a three-pin configuration and is designed for through-hole mounting in a standard TO-220 footprint.
What gate-drive considerations are necessary for switching?
Gate voltage should remain within ±30V to protect the gate
the typical gate charge of 171nC should be accounted for when sizing drivers to meet desired switching speeds.
Which approvals indicate standard compliance for component selection?
It carries JEDEC recognised qualifications and RoHS conformity for material and manufacturing standards.
관련된 링크들
- Infineon IPP Type N-Channel MOSFET, 70 A, 600 V Enhancement, 3-Pin PG-TO220-3 IPP60R037CM8XKSA1
- Infineon IPP Type N-Channel Power Transistor, 19 A, 600 V Enhancement, 3-Pin PG-TO220-3 IPP60R180CM8XKSA1
- Infineon IPP Type N-Channel MOSFET, 36.23 A, 700 V Enhancement, 3-Pin PG-TO220-3 IPP65R060CFD7XKSA1
- Infineon CoolMOS CM8 Type N-Channel Power MOSFET, 135 A, 600 V Enhancement, 22-Pin PG-HDSOP-22 IPDQ60R016CM8XTMA1
- Infineon IPZ Type N-Channel MOSFET, 123 A, 600 V Enhancement, 4-Pin PG-TO247-4 IPZA60R016CM8XKSA1
- Infineon IPW Type N-Channel Power Transistor, 123 A, 600 V Enhancement, 4-Pin PG-TO-247 IPW60R016CM8XKSA1
- Infineon IPP Type N-Channel Power Transistor, 98 A, 135 V Enhancement, 3-Pin PG-TO220-3 IPP073N13NM6AKSA1
- Infineon IPP Type N-Channel MOSFET, 36.23 A, 700 V Enhancement, 3-Pin PG-TO220-3
