제조사부품번호

Infineon IPP60R Type N-Channel MOSFET, 23 A, 600 V Enhancement, 3-Pin TO-220

RS 제품 번호:: 222-4923
제조사 부품 번호:: IPP60R022S7XKSA1
제조업체:: Infineon

Infineon IPP60R Type N-Channel MOSFET, 23 A, 600 V Enhancement, 3-Pin TO-220

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대량 구매 할인 기용 가능

Subtotal (1 tube of 50 units)*

₩603,386.00

재고있음

350 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	Per Tube*
50 - 100	₩12,067.72	₩603,404.80
150 - 200	₩11,603.36	₩580,186.80
250 +	₩11,456.72	₩572,854.80

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 222-4923
제조사 부품 번호:: IPP60R022S7XKSA1
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	23A
	Maximum Drain Source Voltage Vds	600V
	Series	IPP60R
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	22mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	390W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	0.9V
	Typical Gate Charge Qg @ Vgs	150nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	10.36mm
	Width	4.57 mm
	Height	9.45mm
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 23A
	Maximum Drain Source Voltage Vds 600V
	Series IPP60R
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 22mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 390W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 0.9V
	Typical Gate Charge Qg @ Vgs 150nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 10.36mm
	Width 4.57 mm
	Height 9.45mm
	Automotive Standard AEC-Q101

Datasheet - IPP60R022S7XKSA1

The Infineon design optimized for low conduction losses, the 600V CoolMOS™ S7 Superjunction MOSFET (IPP60R022S7) in TO-220 features the best RDS(on) x price for low switching frequency applications, such as active bridge rectifiers, inverter stages, in-rush relays, PLCs, HV DC lines, power solid state relays and solid state circuit breakers. The 600V CoolMOS™ S7 SJ MOSFET achieves higher energy efficiency and reduces BOM expenses.

Minimize conduction losses

Increase energy efficiency

More compact and easier designs

Eliminate or reduce heat sink in solid state design

Lower total cost of ownership (TCO) or bill-of-material (BOM) cost

Infineon IPP60R Type N-Channel MOSFET, 23 A, 600 V Enhancement, 3-Pin TO-220

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