Infineon IPP N-Channel MOSFET, 36.23 A, 700 V Enhancement, 3-Pin PG-TO220-3 IPP65R060CFD7XKSA1
- RS 제품 번호:
- 273-3019
- 제조사 부품 번호:
- IPP65R060CFD7XKSA1
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 tube of 50 units)*
₩331,200.00
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 | Per Tube* |
|---|---|---|
| 50 - 50 | ₩6,624.00 | ₩331,220.00 |
| 100 + | ₩6,492.00 | ₩324,600.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 273-3019
- 제조사 부품 번호:
- IPP65R060CFD7XKSA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 36.23A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | PG-TO220-3 | |
| Series | IPP | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 60mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 171W | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Typical Gate Charge Qg @ Vgs | 68nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC, RoHS | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 36.23A | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type PG-TO220-3 | ||
Series IPP | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 60mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 171W | ||
Maximum Gate Source Voltage Vgs 30V | ||
Typical Gate Charge Qg @ Vgs 68nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC, RoHS | ||
The Infineon 650V cool MOS CFD7 super junction MOSFET in a TO-220 package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar and EV charging stations, in which it enables significant efficiency improvement
Excellent hard-commutation ruggedness
Extra safety margin for designs with increased bus voltage
Enabling increased power density
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