제조사부품번호

Infineon IPP60R Type N-Channel MOSFET, 26 A, 600 V Enhancement, 3-Pin TO-220 IPP60R120P7XKSA1

RS 제품 번호:: 222-4929
제조사 부품 번호:: IPP60R120P7XKSA1
제조업체:: Infineon

Infineon IPP60R Type N-Channel MOSFET, 26 A, 600 V Enhancement, 3-Pin TO-220 IPP60R120P7XKSA1

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대량 구매 할인 기용 가능

Subtotal (1 pack of 5 units)*

₩23,932.40

재고있음

475 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
5 - 5	₩4,786.48	₩23,932.40
10 - 95	₩4,700.00	₩23,500.00
100 - 245	₩4,613.52	₩23,067.60
250 - 495	₩4,530.80	₩22,654.00
500 +	₩4,448.08	₩22,240.40

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 222-4929
제조사 부품 번호:: IPP60R120P7XKSA1
제조업체:: Infineon

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	26A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-220
	Series	IPP60R
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	120mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	95W
	Forward Voltage Vf	0.9V
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	36nC
	Maximum Operating Temperature	150°C
	Length	10.36mm
	Height	9.45mm
	Width	4.57 mm
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 26A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-220
	Series IPP60R
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 120mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 95W
	Forward Voltage Vf 0.9V
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 36nC
	Maximum Operating Temperature 150°C
	Length 10.36mm
	Height 9.45mm
	Width 4.57 mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPP60R120P7XKSA1

The Infineon 600V CoolMOS™ P7 is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.

ESD ruggedness of ≥ 2kV (HBM class 2)

Integrated gate resistor R G

Rugged body diode

Wide portfolio in through hole and surface mount packages

Both standard grade and industrial grade parts are available

Infineon IPP60R Type N-Channel MOSFET, 26 A, 600 V Enhancement, 3-Pin TO-220 IPP60R120P7XKSA1

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