Infineon IPP60R N-Channel MOSFET, 26 A, 600 V Enhancement, 3-Pin TO-220 IPP60R120P7XKSA1

RS 제품 번호:: 222-4929
제조사 부품 번호:: IPP60R120P7XKSA1
제조업체:: Infineon

Infineon IPP60R N-Channel MOSFET, 26 A, 600 V Enhancement, 3-Pin TO-220 IPP60R120P7XKSA1

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Subtotal (1 pack of 5 units)*

₩33,540.00

추가로 2026년 10월 05일 부터 420 개 단위 배송

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수량	한팩당	한팩당*
5 - 5	₩6,708.00	₩33,540.00
10 - 95	₩6,592.00	₩32,960.00
100 - 245	₩6,468.00	₩32,340.00
250 - 495	₩6,352.00	₩31,760.00
500 +	₩6,232.00	₩31,160.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 222-4929
제조사 부품 번호:: IPP60R120P7XKSA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	26A
	Maximum Drain Source Voltage Vds	600V
	Series	IPP60R
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	120mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	36nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	95W
	Forward Voltage Vf	900mV
	Maximum Gate Source Voltage Vgs	20V
	Maximum Operating Temperature	150°C
	Height	9.45mm
	Length	10.36mm
	Standards/Approvals	No
	Width	4.57mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 26A
	Maximum Drain Source Voltage Vds 600V
	Series IPP60R
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 120mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 36nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 95W
	Forward Voltage Vf 900mV
	Maximum Gate Source Voltage Vgs 20V
	Maximum Operating Temperature 150°C
	Height 9.45mm
	Length 10.36mm
	Standards/Approvals No
	Width 4.57mm
	Automotive Standard No

Datasheet - IPP60R120P7XKSA1

Infineon IPP60R Series MOSFET, 600V Maximum Drain Source Voltage, 26A Maximum Continuous Drain Current - IPP60R120P7XKSA1

This MOSFET is a high-voltage switching transistor designed for power-control applications where elevated voltage tolerance and thermal range are required. It operates as an N-channel enhancement device in a through-hole TO-220 package and is suitable for circuit designs that demand robust gate drive and significant continuous current handling in demanding temperature environments.

Features and Benefits:

• 600 V drain-source voltage enables high-voltage switching capability
• 120 mΩ RDS(on) reduces conduction losses for improved efficiency
• 26 A continuous drain current supports substantial load currents
• 36 nC typical gate charge eases gate-drive sizing for Faster switching
• 95 W maximum power dissipation allows high-power operation
• −55 °C to 150 °C operating range supports wide thermal environments

Applications

• Suitable for high-voltage SMPS primary switching stages
• Ideal for motor-drive half-bridge circuits requiring through-hole mounting
• Used with industrial inverters handling elevated voltages
• Can be used for switch-mode power conversion in bench equipment
• Appropriate for power supplies where robust thermal tolerance is necessary

What is the maximum gate voltage recommended for drive circuitry?

The device accepts gate-source voltages up to 20 V, so gate drivers should be selected to remain within this limit.

How does package choice affect mounting and thermal management?

The TO-220 through-hole package facilitates heatsinking and straightforward PCB mounting for improved thermal dissipation.

What conduction performance can be expected during heavy loads?

With an RDS(on) up to 120 mΩ and continuous drain current of 26 A, conduction losses are quantifiable for thermal-design calculations.

How should switching losses be accounted for in design?

Use the typical gate charge of 36 nC to estimate driver energy per switching event and include the 600 V rating when calculating voltage-related switching losses.