제조사부품번호

Infineon IPP60R Type N-Channel MOSFET, 35 A, 600 V Enhancement, 3-Pin TO-220

RS 제품 번호:: 222-4925
제조사 부품 번호:: IPP60R060C7XKSA1
제조업체:: Infineon

Infineon IPP60R Type N-Channel MOSFET, 35 A, 600 V Enhancement, 3-Pin TO-220

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

Subtotal (1 tube of 50 units)*

₩276,736.00

재고있음

950 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	Per Tube*
50 - 100	₩5,534.72	₩276,736.00
150 - 200	₩5,322.28	₩266,076.40
250 +	₩5,254.60	₩262,711.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 222-4925
제조사 부품 번호:: IPP60R060C7XKSA1
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	35A
	Maximum Drain Source Voltage Vds	600V
	Series	IPP60R
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	60mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	68nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	0.9V
	Maximum Power Dissipation Pd	162W
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Length	10.36mm
	Standards/Approvals	No
	Width	4.57 mm
	Height	9.45mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 35A
	Maximum Drain Source Voltage Vds 600V
	Series IPP60R
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 60mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 68nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 0.9V
	Maximum Power Dissipation Pd 162W
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Length 10.36mm
	Standards/Approvals No
	Width 4.57 mm
	Height 9.45mm
	Automotive Standard No

Datasheet - IPP60R060C7XKSA1

The Infineon 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ∼50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs.

Reduced switching loss parameters such as Q G, C oss, E oss

Best-in-class figure of merit Q G*R DS(on)

Increased switching frequency

Best R (on)*A in the world

Rugged body diode

Infineon IPP60R Type N-Channel MOSFET, 35 A, 600 V Enhancement, 3-Pin TO-220

관련된 링크들