Infineon HEXFET Type N-Channel MOSFET & Diode, 62 A, 55 V Enhancement, 3-Pin TO-252

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Subtotal (1 reel of 3000 units)*

₩6,288,600.00

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Units
Per unit
Per Reel*
3000 - 3000₩2,096.20₩6,290,856.00
6000 - 9000₩2,034.16₩6,102,480.00
12000 +₩1,974.00₩5,919,180.00

*price indicative

RS Stock No.:
220-7346
Mfr. Part No.:
AUIRFR48ZTRL
Brand:
Infineon
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브랜드

Infineon

Product Type

MOSFET & Diode

Channel Type

Type N

Maximum Continuous Drain Current Id

62A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-252

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

11mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

40nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

91W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

2.39mm

Width

6.73 mm

Length

6.22mm

Automotive Standard

AEC-Q101

The Infineon AUIRFR48ZTRL specifically designed for automotive applications, this HEXFET power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. It is use in Automotive applications and a wide variety of other applications.

Advanced Process Technology

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

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