Infineon HEXFET Type P-Channel MOSFET, -11 A, -55 V Enhancement, 3-Pin TO-252
- RS Stock No.:
- 262-6769
- Mfr. Part No.:
- IRFR9024NTRLPBF
- Brand:
- Infineon
Image representative of range
Subtotal (1 reel of 3000 units)*
₩1,252,080.00
일시적 품절
- 2026년 5월 04일 부터 배송
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Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | ₩417.36 | ₩1,253,772.00 |
*price indicative
- RS Stock No.:
- 262-6769
- Mfr. Part No.:
- IRFR9024NTRLPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -11A | |
| Maximum Drain Source Voltage Vds | -55V | |
| Series | HEXFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 175mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.6V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 12.7nC | |
| Maximum Power Dissipation Pd | 38W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -11A | ||
Maximum Drain Source Voltage Vds -55V | ||
Series HEXFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 175mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.6V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 12.7nC | ||
Maximum Power Dissipation Pd 38W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. It provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Fully avalanche rated
Fast switching
Related links
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