Infineon Type N-Channel, 78 A, 650 V Enhancement, 4-Pin TO-247-4 IPZA60R120P7XKSA1

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포장 옵션
RS 제품 번호:
220-7468
제조사 부품 번호:
IPZA60R120P7XKSA1
제조업체:
Infineon
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브랜드

Infineon

Channel Type

Type N

Maximum Continuous Drain Current Id

78A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-247-4

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

0.12Ω

Channel Mode

Enhancement

The Infineon 600V Cool MOS P7 super junction (SJ) MOSFET is the successor to the 600V Cool MOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the Cool MOS 7th generation platform ensure its high efficiency.

600V P7 enables excellent FOM RDS(on)xEoss and RDS(on)xQG

ESD ruggedness of ≥ 2kV (HBM class 2)

Integrated gate resistor RG

Rugged body diode

Wide portfolio in through hole and surface mount packages

Both standard grade and industrial grade parts are available

Excellent FOMs RDS(on)xQG / RDS(on)xEoss enable higher efficiency

Ease-of-use in manufacturing environments by stopping ESD failures occurring

Integrated RG reduces MOSFET oscillation sensitivity

MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC

Excellent ruggedness during hard commutation of the body diode seen in LLC topology

Suitable for a wide variety of end applications and output powers

Parts available suitable for consumer and industrial applications

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