Infineon CoolMOS Type N-Channel MOSFET, 76 A, 600 V Enhancement, 4-Pin TO-247
- RS 제품 번호:
- 222-4730
- 제조사 부품 번호:
- IPZA60R037P7XKSA1
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 tube of 30 units)*
₩270,889.20
재고있음
- 90 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tube* |
|---|---|---|
| 30 - 60 | ₩9,029.64 | ₩270,906.12 |
| 90 - 120 | ₩8,683.72 | ₩260,494.68 |
| 150 + | ₩8,572.80 | ₩257,200.92 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 222-4730
- 제조사 부품 번호:
- IPZA60R037P7XKSA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 76A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-247 | |
| Series | CoolMOS | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 37mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 255W | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 121nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 21.1mm | |
| Standards/Approvals | No | |
| Length | 15.9mm | |
| Width | 5.1 mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 76A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-247 | ||
Series CoolMOS | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 37mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 255W | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 121nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 21.1mm | ||
Standards/Approvals No | ||
Length 15.9mm | ||
Width 5.1 mm | ||
Automotive Standard No | ||
The Infineon design of Cool MOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies.
Excellent ESD robustness >2kV (HBM) for all products
Significant reduction of switching and conduction losses Excellent ESD robustness >2kV (HBM) for all products
관련된 링크들
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