제조사부품번호

Infineon CoolMOS C7 Type N-Channel MOSFET, 37 A, 600 V Enhancement, 4-Pin TO-247

RS 제품 번호:: 215-2569
제조사 부품 번호:: IPZA60R080P7XKSA1
제조업체:: Infineon

Infineon CoolMOS C7 Type N-Channel MOSFET, 37 A, 600 V Enhancement, 4-Pin TO-247

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대량 구매 할인 기용 가능

Subtotal (1 tube of 30 units)*

₩141,112.80

재고있음

60 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	Per Tube*
30 - 30	₩4,703.76	₩141,112.80
60 - 90	₩4,602.24	₩138,050.28
120 +	₩4,498.84	₩134,982.12

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 215-2569
제조사 부품 번호:: IPZA60R080P7XKSA1
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	37A
	Maximum Drain Source Voltage Vds	600V
	Series	CoolMOS C7
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	4
	Maximum Drain Source Resistance Rds	80mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	0.9V
	Typical Gate Charge Qg @ Vgs	51nC
	Maximum Power Dissipation Pd	129W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 37A
	Maximum Drain Source Voltage Vds 600V
	Series CoolMOS C7
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 4
	Maximum Drain Source Resistance Rds 80mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 0.9V
	Typical Gate Charge Qg @ Vgs 51nC
	Maximum Power Dissipation Pd 129W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPZA60R080P7XKSA1

The Infineon 600V Cool MOS™ P7 is the successor to the 600V Cool MOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the Cool MOS™ 7th generation platform ensure its high efficiency. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g. very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses make switching application seven more efficient, more compact and much cooler.

Suitable for hard and soft switching (PFC and LLC) due to an outstanding  commutation ruggedness

Excellent ESD robustness >2kV(HBM) for all products

Significant reduction of switching and conduction losses

Wide portfolio in through hole and surface mount packages

Infineon CoolMOS C7 Type N-Channel MOSFET, 37 A, 600 V Enhancement, 4-Pin TO-247

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