제조사부품번호

Infineon CoolMOS P7 Type N-Channel MOSFET, 18 A, 600 V Enhancement, 4-Pin TO-247 IPZA60R180P7XKSA1

RS 제품 번호:: 217-2593
제조사 부품 번호:: IPZA60R180P7XKSA1
제조업체:: Infineon

Infineon CoolMOS P7 Type N-Channel MOSFET, 18 A, 600 V Enhancement, 4-Pin TO-247 IPZA60R180P7XKSA1

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대량 구매 할인 기용 가능

Subtotal (1 pack of 5 units)*

₩27,899.20

재고있음

210 개 단위 배송 준비 완료

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수량	한팩당	한팩당*
5 - 5	₩5,579.84	₩27,899.20
10 - 10	₩5,440.72	₩27,203.60
15 +	₩5,358.00	₩26,790.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 217-2593
제조사 부품 번호:: IPZA60R180P7XKSA1
제조업체:: Infineon

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	18A
	Maximum Drain Source Voltage Vds	600V
	Series	CoolMOS P7
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	4
	Maximum Drain Source Resistance Rds	180mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	72W
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	0.9V
	Typical Gate Charge Qg @ Vgs	25nC
	Maximum Operating Temperature	150°C
	Length	15.9mm
	Height	41.2mm
	Width	5.1 mm
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 18A
	Maximum Drain Source Voltage Vds 600V
	Series CoolMOS P7
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 4
	Maximum Drain Source Resistance Rds 180mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 72W
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 0.9V
	Typical Gate Charge Qg @ Vgs 25nC
	Maximum Operating Temperature 150°C
	Length 15.9mm
	Height 41.2mm
	Width 5.1 mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPZA60R180P7XKSA1

The Infineon 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.

600V P7 enables excellent FOM R DS(on)xE oss DS(on)xQ G

ESD ruggedness of ≥ 2kV (HBM class 2)

Integrated gate resistor R G

Rugged body diode

Wide portfolio in through hole and surface mount packages

Both standard grade and industrial grade parts are available

Infineon CoolMOS P7 Type N-Channel MOSFET, 18 A, 600 V Enhancement, 4-Pin TO-247 IPZA60R180P7XKSA1

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