Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 151 A, 650 V Enhancement, 4-Pin TO-247
- RS 제품 번호:
- 220-7465
- 제조사 부품 번호:
- IPZA60R060P7XKSA1
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 tube of 30 units)*
₩166,323.60
일시적 품절
- 2026년 10월 02일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tube* |
|---|---|---|
| 30 - 30 | ₩5,544.12 | ₩166,340.52 |
| 60 - 90 | ₩5,423.80 | ₩162,730.92 |
| 120 + | ₩5,303.48 | ₩159,121.32 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 220-7465
- 제조사 부품 번호:
- IPZA60R060P7XKSA1
- 제조업체:
- Infineon
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 151A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Series | CoolMOS P7 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 60mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 164W | |
| Typical Gate Charge Qg @ Vgs | 67nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 15.9mm | |
| Height | 21.1mm | |
| Width | 5.1 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 151A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Series CoolMOS P7 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 60mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 164W | ||
Typical Gate Charge Qg @ Vgs 67nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Length 15.9mm | ||
Height 21.1mm | ||
Width 5.1 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 600V Cool MOS P7 super junction MOSFET is the successor to the 600V Cool MOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the Cool MOS 7th generation platform ensure its high efficiency.
600V P7 enables excellent FOM RDS(on)xEoss and RDS(on)xQG
ESD ruggedness of ≥ 2kV (HBM class 2)
Integrated gate resistor RG
Rugged body diode
Wide portfolio in through hole and surface mount packages
Both standard grade and industrial grade parts are available
Excellent FOMs RDS(on)xQG / RDS(on)xEoss enable higher efficiency
Ease-of-use in manufacturing environments by stopping ESD failures occurring
Integrated RG reduces MOSFET oscillation sensitivity
MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC
Excellent ruggedness during hard commutation of the body diode seen in LLC topology
Suitable for a wide variety of end applications and output powers
Parts available suitable for consumer and industrial applications
관련된 링크들
- Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 151 A, 650 V Enhancement, 4-Pin TO-247 IPZA60R060P7XKSA1
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- Infineon CoolMOS P7 Type N-Channel MOSFET, 18 A, 600 V Enhancement, 4-Pin TO-247 IPZA60R180P7XKSA1
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