제조사부품번호

Infineon HEXFET Type N-Channel MOSFET & Diode, 162 A, 40 V Enhancement, 3-Pin TO-263 AUIRF1404STRL

RS 제품 번호:: 220-7341
제조사 부품 번호:: AUIRF1404STRL
제조업체:: Infineon

Infineon HEXFET Type N-Channel MOSFET & Diode, 162 A, 40 V Enhancement, 3-Pin TO-263 AUIRF1404STRL

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대량 구매 할인 기용 가능

Subtotal (1 pack of 2 units)*

₩19,867.84

재고있음

698 개 단위 배송 준비 완료

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수량	한팩당	한팩당*
2 - 198	₩9,933.92	₩19,869.72
200 - 398	₩9,685.76	₩19,373.40
400 +	₩9,539.12	₩19,078.24

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 220-7341
제조사 부품 번호:: AUIRF1404STRL
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET & Diode
	Maximum Continuous Drain Current Id	162A
	Maximum Drain Source Voltage Vds	40V
	Series	HEXFET
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	4mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	200W
	Forward Voltage Vf	1.3V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	160nC
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	175°C
	Length	10.67mm
	Height	4.83mm
	Width	9.65 mm
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET & Diode
	Maximum Continuous Drain Current Id 162A
	Maximum Drain Source Voltage Vds 40V
	Series HEXFET
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 4mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 200W
	Forward Voltage Vf 1.3V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 160nC
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 175°C
	Length 10.67mm
	Height 4.83mm
	Width 9.65 mm
	Standards/Approvals No
	Automotive Standard AEC-Q101

Datasheet - AUIRF1404STRL

The Infineon AUIRF1404STRL specifically designed for Automotive applications, this Stripe. it has planar design of HEXFET power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.

Advanced planar technology

Dynamic dV/dT rating

175°C operating temperature

Fast switching

Fully Avalanche Rated

Repetitive avalanche allowed up to Tjmax

Lead free, RoHS compliant

Automotive qualified

Infineon HEXFET Type N-Channel MOSFET & Diode, 162 A, 40 V Enhancement, 3-Pin TO-263 AUIRF1404STRL

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