제조사부품번호

Infineon HEXFET Type N-Channel MOSFET, 320 A, 40 V Enhancement, 7-Pin TO-263 AUIRF2804STRL7P

RS 제품 번호:: 222-4606
제조사 부품 번호:: AUIRF2804STRL7P
제조업체:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 320 A, 40 V Enhancement, 7-Pin TO-263 AUIRF2804STRL7P

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대량 구매 할인 기용 가능

Subtotal (1 pack of 2 units)*

₩15,641.60

재고있음

800 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
2 - 8	₩7,820.80	₩15,641.60
10 - 98	₩7,679.80	₩15,359.60
100 - 248	₩7,548.20	₩15,096.40
250 - 498	₩7,407.20	₩14,814.40
500 +	₩7,266.20	₩14,532.40

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 222-4606
제조사 부품 번호:: AUIRF2804STRL7P
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	320A
	Maximum Drain Source Voltage Vds	40V
	Series	HEXFET
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	7
	Maximum Drain Source Resistance Rds	1.6mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.3V
	Maximum Power Dissipation Pd	330W
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	170nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Width	9.65 mm
	Height	4.83mm
	Length	10.67mm
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 320A
	Maximum Drain Source Voltage Vds 40V
	Series HEXFET
	Package Type TO-263
	Mount Type Surface
	Pin Count 7
	Maximum Drain Source Resistance Rds 1.6mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.3V
	Maximum Power Dissipation Pd 330W
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 170nC
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Width 9.65 mm
	Height 4.83mm
	Length 10.67mm
	Automotive Standard AEC-Q101

Datasheet - AUIRF2804STRL7P

The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Advanced process technology

Ultra-low on-resistance Fast switching

Lead-Free, RoHS Compliant

Infineon HEXFET Type N-Channel MOSFET, 320 A, 40 V Enhancement, 7-Pin TO-263 AUIRF2804STRL7P

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