Infineon HEXFET Type P-Channel MOSFET, 38 A, 100 V Enhancement, 3-Pin TO-263

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

모든 MOSFETs 열람하기
현재 비가용
RS는 이 제품을 더 이상 판매하지 않습니다.
RS 제품 번호:
218-2971
제조사 부품 번호:
AUIRF5210STRL
제조업체:
Infineon
제품 정보를 선택해 유사 제품을 찾기
모두 선택

브랜드

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

38A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-263

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

60mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

150nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

3.1W

Forward Voltage Vf

-1.6V

Maximum Operating Temperature

150°C

Height

4.83mm

Width

9.65 mm

Length

10.67mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Infineon P-channel automotive MOSFET. It is specifically designed for automotive applications. This cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Advanced Process Technology

P-Channel MOSFET

Ultra Low On-Resistance

Dynamic dv/dt Rating

Fast Switching

관련된 링크들