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Infineon HEXFET N-Channel MOSFET, 162 A, 40 V TO-263 IRF1404STRLPBF

Name: Infineon HEXFET N-Channel MOSFET, 162 A, 40 V TO-263 IRF1404STRLPBF
Brand: Infineon
SKU: 257-9274
Availability: InStock

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Subtotal (1 pack of 2 units)*

₩11,780.00

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* 참고 가격: 실제 구매가격과 다를 수 있습니다

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	162A
	Maximum Drain Source Voltage Vds	40V
	Series	HEXFET
	Package Type	TO-263
	Mount Type	Through Hole
	Maximum Drain Source Resistance Rds	4mΩ
	Maximum Gate Source Voltage Vgs	20V
	Maximum Power Dissipation Pd	200W
	Typical Gate Charge Qg @ Vgs	160nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 162A
	Maximum Drain Source Voltage Vds 40V
	Series HEXFET
	Package Type TO-263
	Mount Type Through Hole
	Maximum Drain Source Resistance Rds 4mΩ
	Maximum Gate Source Voltage Vgs 20V
	Maximum Power Dissipation Pd 200W
	Typical Gate Charge Qg @ Vgs 160nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

The Infineon IRF series is the 40V single n channel HEXFET power mosfet in a D2 Pak package.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Optimized for 10 V gate drive voltage (called normal level)

Industry standard surface mount power package

High current carrying capability package (up to 195 A, die size dependent)

Capable of being wave soldered

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