Infineon HEXFET Type N-Channel MOSFET & Diode, 162 A, 40 V Enhancement, 3-Pin TO-263
- RS 제품 번호:
- 220-7340
- 제조사 부품 번호:
- AUIRF1404STRL
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 reel of 800 units)*
₩4,707,520.00
일시적 품절
- 2027년 1월 01일 부터 배송
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수량 | 한팩당 | 릴당* |
|---|---|---|
| 800 - 800 | ₩5,884.40 | ₩4,706,918.40 |
| 1600 - 2400 | ₩5,765.96 | ₩4,612,768.00 |
| 3200 + | ₩5,651.28 | ₩4,520,422.40 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 220-7340
- 제조사 부품 번호:
- AUIRF1404STRL
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 162A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 160nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 200W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 9.65 mm | |
| Height | 4.83mm | |
| Length | 10.67mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 162A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 160nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 200W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 9.65 mm | ||
Height 4.83mm | ||
Length 10.67mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon AUIRF1404STRL specifically designed for Automotive applications, this Stripe. it has planar design of HEXFET power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
Advanced planar technology
Dynamic dV/dT rating
175°C operating temperature
Fast switching
Fully Avalanche Rated
Repetitive avalanche allowed up to Tjmax
Lead free, RoHS compliant
Automotive qualified
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