Infineon C7 GOLD N-Channel MOSFET, 23 A, 650 V Enhancement, 8-Pin HSOF

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RS 제품 번호:
219-6012
제조사 부품 번호:
IPT60R150G7XTMA1
제조업체:
Infineon
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브랜드

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

23A

Maximum Drain Source Voltage Vds

650V

Package Type

HSOF

Series

C7 GOLD

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

150mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

23nC

Maximum Power Dissipation Pd

106W

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

800mV

Maximum Operating Temperature

150°C

Width

10.58mm

Standards/Approvals

No

Height

2.4mm

Length

10.1mm

Automotive Standard

No

The Infineon CoolMOS C7 Gold superjunction MOSFET series (G7) brings together the benefits of the improved 600V CoolMOS™ C7 Gold technology, 4pin Kelvin source capability and the improved thermal properties of the TO-Leadless (TOLL) package to enable a possible SMD solution for high current hard switching topologies such as power factor correction (PFC) up to 3kW and for resonant circuits such as high end LLC.

Gives best-in-class FOM R DS(on)xE oss and R DS(on)xQ G

Enables best-in-class R DS(on) in smallest footprint

Inbuilt 4 th pin Kelvin source configuration and low parasitic source inductance (∼1nH)

Is MSL1 compliant, total Pb-free, has easy visual inspection grooved leads

Enables improved thermal performance R th

Higher efficiency due to the improved C7 Gold technology and faster switching

Improved power density due to low R DS(on) in small footprint, by either replacing TO-packages (height restrictions) or paralleling SMD packages due to thermal or R DS(on) requirements

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