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Infineon IPT60R Type N-Channel MOSFET, 29 A, 600 V Enhancement, 8-Pin HSOF IPT60R080G7XTMA1

RS 제품 번호:: 222-4940
제조사 부품 번호:: IPT60R080G7XTMA1
제조업체:: Infineon

Infineon IPT60R Type N-Channel MOSFET, 29 A, 600 V Enhancement, 8-Pin HSOF IPT60R080G7XTMA1

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대량 구매 할인 기용 가능

Subtotal (1 pack of 2 units)*

₩17,822.40

재고있음

1,982 개 단위 배송 준비 완료

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수량	한팩당	한팩당*
2 - 8	₩8,911.20	₩17,822.40
10 - 98	₩8,751.40	₩17,502.80
100 - 248	₩8,591.60	₩17,183.20
250 - 498	₩8,441.20	₩16,882.40
500 +	₩8,290.80	₩16,581.60

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 222-4940
제조사 부품 번호:: IPT60R080G7XTMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	29A
	Maximum Drain Source Voltage Vds	600V
	Package Type	HSOF
	Series	IPT60R
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	80mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	0.8V
	Maximum Power Dissipation Pd	167W
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	42nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Width	10.58 mm
	Height	2.4mm
	Length	10.1mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 29A
	Maximum Drain Source Voltage Vds 600V
	Package Type HSOF
	Series IPT60R
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 80mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 0.8V
	Maximum Power Dissipation Pd 167W
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 42nC
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Width 10.58 mm
	Height 2.4mm
	Length 10.1mm
	Automotive Standard No

Datasheet - IPT60R080G7XTMA1

The Infineon CoolMOS™ C7 Gold superjunction MOSFET series (G7) brings together the benefits of the improved 600V CoolMOS™ C7 Gold technology, 4pin Kelvin source capability and the improved thermal properties of the TO-Leadless (TOLL) package to enable a possible SMD solution for high current hard switching topologies such as power factor correction (PFC) up to 3kW and for resonant circuits such as high end LLC.

Gives best-in-class FOM R DS(on)xE oss and R DS(on)xQ G

Enables best-in-class R DS(on) in smallest footprint

Infineon IPT60R Type N-Channel MOSFET, 29 A, 600 V Enhancement, 8-Pin HSOF IPT60R080G7XTMA1

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