Infineon HEXFET Type N-Channel MOSFET & Diode, 270 A, 40 V Enhancement, 3-Pin TO-263
- RS 제품 번호:
- 220-7342
- 제조사 부품 번호:
- AUIRF2804STRL
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 reel of 800 units)*
₩3,993,120.00
재고있음
- 4,800 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 800 - 3200 | ₩4,991.40 | ₩3,992,518.40 |
| 4000 + | ₩4,891.76 | ₩3,912,656.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 220-7342
- 제조사 부품 번호:
- AUIRF2804STRL
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 270A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 160nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 300W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.83mm | |
| Standards/Approvals | No | |
| Width | 9.65 mm | |
| Length | 10.67mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 270A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 160nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 300W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Height 4.83mm | ||
Standards/Approvals No | ||
Width 9.65 mm | ||
Length 10.67mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon offers a wide range of 20V-40V N-channel automotive qualified power MOSFETs using the new OptiMOS technology in a variety of packages to meet a range of needs and achieving RDS(on) down to 0.6mΩ.The new OptiMOS 6 and Optimos5 40V benchmark MOSFET technology enables low conduction losses (best in Class RDSon performance), low switching losses (improved switching behaviour), improved diode recovery and EMC behaviour. This MOSFET technology is used in the most advanced and innovative packages in order to reach the best product performances and quality. For ultimate design flexibility, automotive-qualified MOSFETs are available in a variety of packages to meet a range of needs. Infineon offer customers a steady stream of improvements in current capability, switching behaviour, reliability, package size and overall quality. The newly developed integrated half-bridge is an innovative and cost efficient package solution for motor drive and body applications.
Advanced process technology
Ultra-low on-resistance
175°C operating temperature
Fast switching
Repetitive avalanche allowed up to Tjmax
관련된 링크들
- Infineon HEXFET Type N-Channel MOSFET & Diode, 270 A, 40 V Enhancement, 3-Pin TO-263 AUIRF2804STRL
- Infineon HEXFET Type N-Channel MOSFET, 320 A, 40 V Enhancement, 7-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET, 320 A, 40 V Enhancement, 7-Pin TO-263 AUIRF2804STRL7P
- Infineon HEXFET Type P-Channel MOSFET, 38 A, 100 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET, 160 A, 40 V Enhancement, 7-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET & Diode, 162 A, 40 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type P-Channel MOSFET, 38 A, 100 V Enhancement, 3-Pin TO-263 AUIRF5210STRL
- Infineon HEXFET Type N-Channel MOSFET & Diode, 162 A, 40 V Enhancement, 3-Pin TO-263 AUIRF1404STRL