제조사부품번호

Infineon IPD Type N-Channel MOSFET, 13 A, 800 V Enhancement, 3-Pin TO-252

RS 제품 번호:: 217-2533
제조사 부품 번호:: IPD80R360P7ATMA1
제조업체:: Infineon

Infineon IPD Type N-Channel MOSFET, 13 A, 800 V Enhancement, 3-Pin TO-252

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대량 구매 할인 기용 가능

Subtotal (1 reel of 2500 units)*

₩4,197,100.00

일시적 품절

2026년 5월 04일 부터 배송

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수량	한팩당	릴당*
2500 - 10000	₩1,678.84	₩4,198,040.00
12500 +	₩1,645.00	₩4,114,380.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 217-2533
제조사 부품 번호:: IPD80R360P7ATMA1
제조업체:: Infineon

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	13A
	Maximum Drain Source Voltage Vds	800V
	Package Type	TO-252
	Series	IPD
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	360mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-40°C
	Typical Gate Charge Qg @ Vgs	12nC
	Maximum Power Dissipation Pd	42W
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Height	2.41mm
	Length	6.73mm
	Width	6.22 mm
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 13A
	Maximum Drain Source Voltage Vds 800V
	Package Type TO-252
	Series IPD
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 360mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -40°C
	Typical Gate Charge Qg @ Vgs 12nC
	Maximum Power Dissipation Pd 42W
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Height 2.41mm
	Length 6.73mm
	Width 6.22 mm
	Automotive Standard AEC-Q101

Datasheet - IPD80R360P7ATMA1

The Infineon 800V CoolMOS™ P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK R DS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort.

Best-in-class FOM RDS(on)*Eoss; reduced Qg, Ciss, and Coss

Best-in-class DPAK RDS(on)

Best-in-class V(GS)th of 3V and smallest V(GS)th variation of ±0.5V

Integrated Zener Diode ESD protection

Fully optimized portfolio

Infineon IPD Type N-Channel MOSFET, 13 A, 800 V Enhancement, 3-Pin TO-252

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