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Infineon IPD Type N-Channel MOSFET, 13 A, 800 V Enhancement, 3-Pin TO-252 IPD80R360P7ATMA1

RS 제품 번호:: 217-2534
제조사 부품 번호:: IPD80R360P7ATMA1
제조업체:: Infineon

Infineon IPD Type N-Channel MOSFET, 13 A, 800 V Enhancement, 3-Pin TO-252 IPD80R360P7ATMA1

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대량 구매 할인 기용 가능

Subtotal (1 pack of 10 units)*

₩27,899.20

일시적 품절

2,140 개 단위 배송 준비 완료

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수량	한팩당	한팩당*
10 - 620	₩2,789.92	₩27,899.20
630 - 1240	₩2,720.36	₩27,203.60
1250 +	₩2,679.00	₩26,790.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 217-2534
제조사 부품 번호:: IPD80R360P7ATMA1
제조업체:: Infineon

참조 문서

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제품 세부 사항

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	13A
	Maximum Drain Source Voltage Vds	800V
	Series	IPD
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	360mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	12nC
	Minimum Operating Temperature	-40°C
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	42W
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Length	6.73mm
	Width	6.22 mm
	Standards/Approvals	No
	Height	2.41mm
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 13A
	Maximum Drain Source Voltage Vds 800V
	Series IPD
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 360mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 12nC
	Minimum Operating Temperature -40°C
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 42W
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Length 6.73mm
	Width 6.22 mm
	Standards/Approvals No
	Height 2.41mm
	Automotive Standard AEC-Q101

Datasheet - IPD80R360P7ATMA1

The Infineon 800V CoolMOS™ P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK R DS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort.

Best-in-class FOM RDS(on)*Eoss; reduced Qg, Ciss, and Coss

Best-in-class DPAK RDS(on)

Best-in-class V(GS)th of 3V and smallest V(GS)th variation of ±0.5V

Integrated Zener Diode ESD protection

Fully optimized portfolio

Infineon IPD Type N-Channel MOSFET, 13 A, 800 V Enhancement, 3-Pin TO-252 IPD80R360P7ATMA1

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