Infineon IPD50R Type N-Channel MOSFET, 13 A, 600 V Enhancement, 3-Pin TO-252
- RS 제품 번호:
- 222-4901
- 제조사 부품 번호:
- IPD60R180C7ATMA1
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 reel of 2500 units)*
₩4,427,400.00
일시적 품절
- 2026년 5월 01일 부터 배송
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수량 | 한팩당 | 릴당* |
|---|---|---|
| 2500 - 10000 | ₩1,770.96 | ₩4,425,990.00 |
| 12500 + | ₩1,735.24 | ₩4,337,630.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 222-4901
- 제조사 부품 번호:
- IPD60R180C7ATMA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | IPD50R | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 180mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 68W | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Height | 2.41mm | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Width | 6.22 mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series IPD50R | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 180mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 68W | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Height 2.41mm | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Width 6.22 mm | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ∼50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs.
Enables increasing switching frequency without loss in efficiency
Measure showing key parameter for light load and full load efficiency
Doubling the switching frequency will half the size of magnetic components
Smaller packages for same R DS(on)
Can be used in many more positions for both hard and soft switching topologies
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