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Infineon 800V CoolMOS P7 Type N-Channel MOSFET, 6 A, 800 V Enhancement, 3-Pin TO-252 IPD80R900P7ATMA1

RS 제품 번호:: 215-2518
제조사 부품 번호:: IPD80R900P7ATMA1
제조업체:: Infineon

Infineon 800V CoolMOS P7 Type N-Channel MOSFET, 6 A, 800 V Enhancement, 3-Pin TO-252 IPD80R900P7ATMA1

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Subtotal (1 pack of 20 units)*

₩36,240.00

3,900 개 단위 배송 준비 완료

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수량	한팩당	한팩당*
20 - 620	₩1,812.00	₩36,260.00
640 - 1240	₩1,768.00	₩35,360.00
1260 +	₩1,740.00	₩34,820.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 215-2518
제조사 부품 번호:: IPD80R900P7ATMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	6A
	Maximum Drain Source Voltage Vds	800V
	Series	800V CoolMOS P7
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	900mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	15nC
	Maximum Power Dissipation Pd	45W
	Forward Voltage Vf	0.9V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 6A
	Maximum Drain Source Voltage Vds 800V
	Series 800V CoolMOS P7
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 900mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 15nC
	Maximum Power Dissipation Pd 45W
	Forward Voltage Vf 0.9V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPD80R900P7ATMA1

Infineon 800V CoolMOS P7 Series MOSFET, 800V Drain Source Voltage, 6A Continuous Drain Current - IPD80R900P7ATMA1

This MOSFET is a high-voltage switching transistor designed for power conversion and energy-efficient switching in demanding environments. It operates across a wide temperature range and is supplied in a surface-mount package suited to compact board layouts, making it appropriate for industrial and power-electronics applications where robust voltage handling is required.

Features and Benefits:

• 800V drain rating enables high-voltage system switching
• 6A continuous drain current supports moderate load currents
• 900mΩ low on-resistance reduces conduction losses
• 15nC typical gate charge allows faster gate-drive response
• 45W maximum power dissipation handles substantial thermal stress
• Gate-source tolerance up to 20V accommodates common gate-drive voltages

Applications

• Ideal for power supplies in high-voltage converters
• Used for switch-mode power-supply stage switching
• Suitable for industrial inverter front-ends
• Can be used for high-voltage motor-drive circuits
• Used with compact surface-mount assemblies on PCBs

What temperature extremes can it withstand in operation?

It is specified to function between -55°C and 150°C, covering low-temperature and elevated-junction applications.

How is it mounted to a PCB and what package does it use?

It is supplied in a TO-252 package intended for surface-mount assembly to save board area.

What conduction behaviour should I expect under load?

The device exhibits an on-resistance up to 900mΩ, influencing conduction losses and thermal design for continuous currents up to 6A.

What gate-drive requirements are necessary for safe operation?

The gate-source voltage rating is ±20V, and typical total gate charge is 15nC, informing your driver capability and switching energy budget.