제조사부품번호

Infineon IPD50R Type N-Channel MOSFET, 13 A, 600 V Enhancement, 3-Pin TO-252 IPD60R180C7ATMA1

RS 제품 번호:: 222-4902
제조사 부품 번호:: IPD60R180C7ATMA1
제조업체:: Infineon

Infineon IPD50R Type N-Channel MOSFET, 13 A, 600 V Enhancement, 3-Pin TO-252 IPD60R180C7ATMA1

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대량 구매 할인 기용 가능

Subtotal (1 pack of 5 units)*

₩20,191.20

재고있음

1,495 개 단위 배송 준비 완료

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수량	한팩당	한팩당*
5 - 5	₩4,038.24	₩20,191.20
10 - 95	₩3,966.80	₩19,834.00
100 - 245	₩3,895.36	₩19,476.80
250 - 495	₩3,823.92	₩19,119.60
500 +	₩3,756.24	₩18,781.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 222-4902
제조사 부품 번호:: IPD60R180C7ATMA1
제조업체:: Infineon

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	13A
	Maximum Drain Source Voltage Vds	600V
	Series	IPD50R
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	180mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	68W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	0.9V
	Typical Gate Charge Qg @ Vgs	24nC
	Height	2.41mm
	Length	6.73mm
	Width	6.22 mm
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 13A
	Maximum Drain Source Voltage Vds 600V
	Series IPD50R
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 180mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 68W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 0.9V
	Typical Gate Charge Qg @ Vgs 24nC
	Height 2.41mm
	Length 6.73mm
	Width 6.22 mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPD60R180C7ATMA1

The Infineon 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ∼50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs.

Enables increasing switching frequency without loss in efficiency

Measure showing key parameter for light load and full load efficiency

Doubling the switching frequency will half the size of magnetic components

Smaller packages for same R DS(on)

Can be used in many more positions for both hard and soft switching topologies

Infineon IPD50R Type N-Channel MOSFET, 13 A, 600 V Enhancement, 3-Pin TO-252 IPD60R180C7ATMA1

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