Infineon HEXFET N-Channel MOSFET, 48 A, 60 V Enhancement, 3-Pin TO-263 IRFZ44ESTRLPBF
- RS 제품 번호:
- 215-2605
- 제조사 부품 번호:
- IRFZ44ESTRLPBF
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 pack of 20 units)*
₩37,520.00
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 20 - 180 | ₩1,876.00 | ₩37,504.00 |
| 200 - 380 | ₩1,828.00 | ₩36,564.00 |
| 400 + | ₩1,800.00 | ₩36,004.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 215-2605
- 제조사 부품 번호:
- IRFZ44ESTRLPBF
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 48A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 23mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 60nC | |
| Maximum Power Dissipation Pd | 110W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 48A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 23mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 60nC | ||
Maximum Power Dissipation Pd 110W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon series fifth generation HEXFET from International rectifier utilize Advanced processing techniques to achieve extremely low on resistance for Silicon area. This benefits, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET are well known for, providing sufficient level device for, provides designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2pack is a surface mount power package capable of accommodating die sizes upto HEX-4. It provide the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2pack is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.
Advanced Process Technology
Fully avalanche rated
Fast switching
관련된 링크들
- Infineon HEXFET N-Channel MOSFET, 48 A, 60 V Enhancement, 3-Pin TO-263 IRFZ44ESTRLPBF
- Infineon HEXFET N-Channel MOSFET, 84 A, 60 V Enhancement, 3-Pin TO-263 IRF1010ESTRLPBF
- Infineon HEXFET N-Channel Power MOSFET, 48 A, 60 V Enhancement, 3-Pin TO-220AB IRFZ44EPBF
- Infineon HEXFET N-Channel MOSFET, 64 A, 55 V TO-263 IRFZ48NSTRLPBF
- Infineon HEXFET N-Channel MOSFET, 29 A, 55 V Enhancement, 3-Pin TO-263 IRFZ34NSTRLPBF
- Infineon HEXFET N-Channel MOSFET, 55 A, 60 V Enhancement, 3-Pin TO-220 IRFZ44VPBF
- Infineon HEXFET N-Channel MOSFET, 49 A, 55 V Enhancement, 3-Pin TO-220 IRFZ44NPBF
- Infineon HEXFET N-Channel MOSFET, 51 A, 55 V Enhancement, 3-Pin TO-220 IRFZ44ZPBF