Infineon HEXFET Type N-Channel MOSFET, 84 A, 60 V Enhancement, 3-Pin TO-263 IRF1010ESTRLPBF

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Subtotal (1 pack of 10 units)*

₩23,322.00

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한팩당
한팩당*
10 - 10₩2,332.20₩23,322.00
20 - 90₩2,289.30₩22,893.00
100 - 240₩2,248.35₩22,483.50
250 - 490₩2,209.35₩22,093.50
500 +₩2,168.40₩21,684.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

포장 옵션
RS 제품 번호:
222-4733
Distrelec 제품 번호:
304-39-411
제조사 부품 번호:
IRF1010ESTRLPBF
제조업체:
Infineon
제품 정보를 선택해 유사 제품을 찾기
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브랜드

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

84A

Maximum Drain Source Voltage Vds

60V

Series

HEXFET

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

12mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

86.6nC

Maximum Power Dissipation Pd

170W

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Height

4.83mm

Standards/Approvals

No

Length

10.67mm

Automotive Standard

No

The Infineon design of HEXFET® Power MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Advanced process technology

Ultra-low on-resistance Fast switching

Lead-Free, RoHS Compliant

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