제조사부품번호

Infineon HEXFET Type N-Channel MOSFET, 84 A, 60 V Enhancement, 3-Pin TO-263 IRF1010ESTRLPBF

RS 제품 번호:: 222-4733
제조사 부품 번호:: IRF1010ESTRLPBF
제조업체:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 84 A, 60 V Enhancement, 3-Pin TO-263 IRF1010ESTRLPBF

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대량 구매 할인 기용 가능

Subtotal (1 pack of 10 units)*

₩20,435.60

마지막 RS 재고

최종적인 60 개 unit(s)이 배송 준비 됨

수량	한팩당	한팩당*
10 - 10	₩2,043.56	₩20,435.60
20 - 90	₩2,005.96	₩20,059.60
100 - 240	₩1,970.24	₩19,702.40
250 - 490	₩1,936.40	₩19,364.00
500 +	₩1,900.68	₩19,006.80

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 222-4733
제조사 부품 번호:: IRF1010ESTRLPBF
제조업체:: Infineon

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	84A
	Maximum Drain Source Voltage Vds	60V
	Package Type	TO-263
	Series	HEXFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	12mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	86.6nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	170W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Height	4.83mm
	Standards/Approvals	No
	Length	10.67mm
	Width	9.65 mm
	Automotive Standard	No
	Distrelec Product Id	304-39-411

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 84A
	Maximum Drain Source Voltage Vds 60V
	Package Type TO-263
	Series HEXFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 12mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 86.6nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 170W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Height 4.83mm
	Standards/Approvals No
	Length 10.67mm
	Width 9.65 mm
	Automotive Standard No
	Distrelec Product Id 304-39-411

Datasheet - IRF1010ESTRLPBF

The Infineon design of HEXFET® Power MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Advanced process technology

Ultra-low on-resistance Fast switching

Lead-Free, RoHS Compliant

Infineon HEXFET Type N-Channel MOSFET, 84 A, 60 V Enhancement, 3-Pin TO-263 IRF1010ESTRLPBF

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