Infineon HEXFET Type N-Channel MOSFET, 49 A, 55 V Enhancement, 3-Pin TO-220 IRFZ44NPBF

RS 제품 번호:: 540-9777
Distrelec 제품 번호:: 303-41-384
제조사 부품 번호:: IRFZ44NPBF
제조업체:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 49 A, 55 V Enhancement, 3-Pin TO-220 IRFZ44NPBF

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Subtotal (1 unit)*

₩1,729.60

재고있음

504 개 단위 배송 준비 완료
추가로 2026년 1월 01일 부터 633 개 단위 배송
추가로 2026년 7월 02일 부터 2,000 개 단위 배송

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수량	한팩당
1 - 12	₩1,729.60
13 - 24	₩1,692.00
25 +	₩1,673.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 540-9777
Distrelec 제품 번호:: 303-41-384
제조사 부품 번호:: IRFZ44NPBF
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	49A
	Maximum Drain Source Voltage Vds	55V
	Series	HEXFET
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	17.5mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	63nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.3V
	Maximum Power Dissipation Pd	94W
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	175°C
	Height	8.77mm
	Length	10.67mm
	Width	4.4 mm
	Standards/Approvals	No
	Distrelec Product Id	30341384
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 49A
	Maximum Drain Source Voltage Vds 55V
	Series HEXFET
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 17.5mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 63nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.3V
	Maximum Power Dissipation Pd 94W
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 175°C
	Height 8.77mm
	Length 10.67mm
	Width 4.4 mm
	Standards/Approvals No
	Distrelec Product Id 30341384
	Automotive Standard No

Infineon HEXFET Series MOSFET, 49A Maximum Continuous Drain Current, 94W Maximum Power Dissipation - IRFZ44NPBF

This MOSFET is designed for performance in automation, electronics, and electrical engineering applications. It can manage high current levels with low resistance, enhancing the efficiency of electronic circuits. With HEXFET technology, the device offers improved reliability and effectiveness in various environments.

Features & Benefits

• Utilises enhancement mode for responsive control

• Low resistance of 17.5mΩ for effective power management

• Fast switching speeds for improved system performance

Applications

• Suitable for DC-DC converters

• Motor drives and control systems

• Renewable energy systems, such as solar inverters

What impact does the low resistance have on performance?

The low on-resistance of 17.5mΩ enhances efficiency by minimising energy losses during operation, which is advantageous in high-current circuits.

How does temperature affect the continuous drain current?

Continuous drain current is rated at 49A at 25°C and decreases to 35A at 100°C, ensuring safe usage in varying environments.

Can this component handle repetitive avalanche conditions?

Yes, it is designed to withstand repetitive avalanche conditions with an avalanche current rating of up to 25A and an avalanche energy of 9.4mJ, providing additional durability.

What type of applications benefit most from using this MOSFET?

This component is particularly useful in high-power applications, including industrial automation controls and automotive systems requiring efficient energy conversion.

Is it compatible with standard PCB designs?

Yes, its TO-220AB package is widely used in various PCB layouts, allowing for straightforward integration into existing designs.