Infineon HEXFET N-Channel MOSFET, 48 A, 60 V Enhancement, 3-Pin TO-263 IRFZ44ESTRLPBF

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RS 제품 번호:
215-2604
제조사 부품 번호:
IRFZ44ESTRLPBF
제조업체:
Infineon
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브랜드

Infineon

Series

HEXFET

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current (Id)

48 A

Maximum Drain Source Voltage (Vds)

60 V

Channel Mode

Enhancement

Pin Count

3

Package Type

TO-263

Automotive Standard

No

Forward Voltage (Vf)

1.3 V

Maximum Drain Source Resistance (Rds)

23 mΩ

Maximum Gate Source Voltage (Vgs)

20 V

Maximum Operating Temperature

175 °C

Maximum Power Dissipation (Pd)

110 W

Minimum Operating Temperature

-55 °C

Mount Type

Surface

Standards/Approvals

No

Typical Gate Charge (Qg) @ Vgs

60 nC

The Infineon series fifth generation HEXFET from International rectifier utilize Advanced processing techniques to achieve extremely low on resistance for Silicon area. This benefits, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET are well known for, providing sufficient level device for, provides designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2pack is a surface mount power package capable of accommodating die sizes upto HEX-4. It provide the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2pack is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.

Advanced Process Technology

Fully avalanche rated

Fast switching

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