Infineon 700V CoolMOS P7 Type N-Channel MOSFET, 6 A, 700 V Enhancement, 3-Pin TO-252 IPD70R900P7SAUMA1

RS 제품 번호:: 214-4394
제조사 부품 번호:: IPD70R900P7SAUMA1
제조업체:: Infineon

Infineon 700V CoolMOS P7 Type N-Channel MOSFET, 6 A, 700 V Enhancement, 3-Pin TO-252 IPD70R900P7SAUMA1

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Subtotal (1 pack of 50 units)*

₩48,400.00

4,900 개 단위 배송 준비 완료

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RS 제품 번호:: 214-4394
제조사 부품 번호:: IPD70R900P7SAUMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	6A
	Maximum Drain Source Voltage Vds	700V
	Package Type	TO-252
	Series	700V CoolMOS P7
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	900mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	0.9V
	Maximum Power Dissipation Pd	30.5W
	Minimum Operating Temperature	-40°C
	Typical Gate Charge Qg @ Vgs	6.8nC
	Maximum Operating Temperature	150°C
	Length	6.65mm
	Standards/Approvals	No
	Height	2.35mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 6A
	Maximum Drain Source Voltage Vds 700V
	Package Type TO-252
	Series 700V CoolMOS P7
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 900mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 0.9V
	Maximum Power Dissipation Pd 30.5W
	Minimum Operating Temperature -40°C
	Typical Gate Charge Qg @ Vgs 6.8nC
	Maximum Operating Temperature 150°C
	Length 6.65mm
	Standards/Approvals No
	Height 2.35mm
	Automotive Standard No

Datasheet - IPD70R900P7SAUMA1

Infineon 700V CoolMOS P7 Series MOSFET, 700V Maximum Drain Source Voltage, 6A Maximum Continuous Drain Current - IPD70R900P7SAUMA1

This MOSFET is a high-voltage, N-channel switching transistor designed for power conversion and switching applications. It operates across a wide temperature span and is intended for surface-mounted power designs where high blocking voltage and moderate current capability are required. The device supports enhancement-mode operation and is suited to systems that demand compact power components with controlled gate-drive characteristics.

Features and Benefits:

• 700V blocking voltage enabling high-voltage switching
• 6A continuous drain current for moderate load handling
• 900mΩ Rds(on) limiting conduction losses under load
• 6.8nC typical gate charge for faster gate transitions
• 30.5W maximum power dissipation for thermal headroom
• 16V maximum gate-source rating permitting robust gate drive

Applications

• Suitable for SMPS primary switch duties in high-voltage supplies
• Ideal for offline power supplies requiring 700V blocking
• Used with power converters needing moderate continuous current
• Can be used for switched-mode topologies in industrial equipment
• Suitable for compact surface-mount power assemblies

What package type is provided for board mounting?

It is supplied in a TO-252 surface-mount package allowing soldered PCB attachment and efficient thermal contact.

How does temperature range affect deployment in harsh environments?

The device is specified to operate from -40°C up to 150°C, supporting applications with elevated junction temperatures and wide ambient variations.

What gate-drive constraints should be observed in designs?

The gate must not exceed ±16V relative to source, so gate-drive circuitry should include clamping or level-shifting to prevent overvoltage.

How does the device’s channel and mode influence circuit topology?

Being an N-channel enhancement device, it requires a positive gate-source voltage to conduct and is suitable for low-side or high-side switching with appropriate driver arrangements.