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Infineon IPD Type N-Channel MOSFET, 9 A, 600 V Enhancement, 3-Pin TO-252 IPD60R360P7SAUMA1

RS 제품 번호:: 217-2524
제조사 부품 번호:: IPD60R360P7SAUMA1
제조업체:: Infineon

Infineon IPD Type N-Channel MOSFET, 9 A, 600 V Enhancement, 3-Pin TO-252 IPD60R360P7SAUMA1

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대량 구매 할인 기용 가능

Subtotal (1 pack of 20 units)*

₩25,342.40

재고있음

추가로 2025년 12월 29일 부터 3,960 개 단위 배송

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수량	한팩당	한팩당*
20 - 620	₩1,267.12	₩25,323.60
640 - 1240	₩1,235.16	₩24,703.20
1260 +	₩1,214.48	₩24,289.60

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 217-2524
제조사 부품 번호:: IPD60R360P7SAUMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	9A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-252
	Series	IPD
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	360mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	41W
	Minimum Operating Temperature	-40°C
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	9.4nC
	Forward Voltage Vf	0.9V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Width	6.22 mm
	Height	2.41mm
	Length	6.73mm
	Distrelec Product Id	304-39-407
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 9A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-252
	Series IPD
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 360mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 41W
	Minimum Operating Temperature -40°C
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 9.4nC
	Forward Voltage Vf 0.9V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Width 6.22 mm
	Height 2.41mm
	Length 6.73mm
	Distrelec Product Id 304-39-407
	Automotive Standard No

Datasheet - IPD60R360P7SAUMA1

The Infineon 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.

600V P7 enables excellent FOM R DS(on)xE oss and R DS(on)xQ G

ESD ruggedness of ≥ 2kV (HBM class 2)

Integrated gate resistor R G

Rugged body diode

Wide portfolio in through hole and surface mount packages

Both standard grade and industrial grade parts are available

Infineon IPD Type N-Channel MOSFET, 9 A, 600 V Enhancement, 3-Pin TO-252 IPD60R360P7SAUMA1

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