Infineon CoolMOS P7 Type N-Channel MOSFET, 4 A, 700 V Enhancement, 3-Pin TO-252 IPD70R1K4P7SAUMA1

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Subtotal (1 pack of 50 units)*

₩32,900.00

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50 - 600₩658.00₩32,900.00
650 - 1200₩641.08₩32,091.60
1250 +₩631.68₩31,584.00

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포장 옵션
RS 제품 번호:
214-9047
제조사 부품 번호:
IPD70R1K4P7SAUMA1
제조업체:
Infineon
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모두 선택

브랜드

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

4A

Maximum Drain Source Voltage Vds

700V

Series

CoolMOS P7

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.4Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

22.7W

Minimum Operating Temperature

-40°C

Maximum Gate Source Voltage Vgs

16 V

Forward Voltage Vf

0.9V

Typical Gate Charge Qg @ Vgs

4.7nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

6.73mm

Height

2.41mm

Width

6.22 mm

Automotive Standard

No

The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV, etc. The new series provides all the benefits of a fast switching Super junction MOSFET, combined with an excellent price/performance ratio and state of the art ease-of-use level. The technology meets highest efficiency standards and supports high power density, enabling customers going towards very slim designs.

It has Excellent thermal behaviour

Integrated ESD protection diode

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