STMicroelectronics SCT Type N-Channel MOSFET, 20 A, 1200 V Depletion, 3-Pin Hip-247 SCTWA20N120
- RS 제품 번호:
- 202-5492
- 제조사 부품 번호:
- SCTWA20N120
- 제조업체:
- STMicroelectronics
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 unit)*
₩25,342.40
마지막 RS 재고
- 최종적인 6 개 unit(s)이 배송 준비 됨
수량 | 한팩당 |
|---|---|
| 1 - 7 | ₩25,342.40 |
| 8 - 14 | ₩24,703.20 |
| 15 + | ₩23,970.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 202-5492
- 제조사 부품 번호:
- SCTWA20N120
- 제조업체:
- STMicroelectronics
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | Hip-247 | |
| Series | SCT | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.189Ω | |
| Channel Mode | Depletion | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 175W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Forward Voltage Vf | 3.6V | |
| Maximum Operating Temperature | 200°C | |
| Length | 16.02mm | |
| Standards/Approvals | No | |
| Width | 5.15 mm | |
| Height | 41.37mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type Hip-247 | ||
Series SCT | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.189Ω | ||
Channel Mode Depletion | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 175W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Forward Voltage Vf 3.6V | ||
Maximum Operating Temperature 200°C | ||
Length 16.02mm | ||
Standards/Approvals No | ||
Width 5.15 mm | ||
Height 41.37mm | ||
Automotive Standard No | ||
The STMicroelectronics silicon carbide power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.
Very fast and robust intrinsic body diode
Low capacitance
관련된 링크들
- STMicroelectronics SCT Type N-Channel MOSFET, 20 A, 1200 V Depletion, 3-Pin Hip-247
- STMicroelectronics SCT Type N-Channel SiC Power Module, 16 A, 1200 V Depletion, 3-Pin Hip-247 SCT20N120AG
- STMicroelectronics SCT Type N-Channel MOSFET, 12 A, 1200 V Depletion, 3-Pin Hip-247 SCT10N120
- STMicroelectronics SCT Type N-Channel MOSFET, 65 A, 1200 V Depletion, 3-Pin Hip-247 SCT50N120
- STMicroelectronics SCT Type N-Channel MOSFET, 65 A, 1200 V Depletion, 3-Pin Hip-247
- STMicroelectronics SCT Type N-Channel MOSFET, 12 A, 1200 V Depletion, 3-Pin Hip-247
- STMicroelectronics SCT Type N-Channel SiC Power Module, 16 A, 1200 V Depletion, 3-Pin Hip-247
- STMicroelectronics SCT Type N-Channel SiC Power Module, 12 A, 1200 V Depletion, 3-Pin Hip-247 SCT10N120AG