Vishay E Type N-Channel Power MOSFET, 13 A, 800 V Enhancement, 3-Pin TO-220AB SIHP15N80AE-GE3

RS 제품 번호:: 210-4991
제조사 부품 번호:: SIHP15N80AE-GE3
제조업체:: Vishay

Vishay E Type N-Channel Power MOSFET, 13 A, 800 V Enhancement, 3-Pin TO-220AB SIHP15N80AE-GE3

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Subtotal (1 tube of 50 units)*

₩137,500.00

850 개 단위 배송 준비 완료

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수량	한팩당	Per Tube*
50 - 50	₩2,750.00	₩137,460.00
100 - 150	₩2,690.00	₩134,480.00
200 +	₩2,608.00	₩130,440.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 210-4991
제조사 부품 번호:: SIHP15N80AE-GE3
제조업체:: Vishay

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모두 선택	제품 정보	값
	브랜드	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	13A
	Maximum Drain Source Voltage Vds	800V
	Series	E
	Package Type	TO-220AB
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	304mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	53nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	156W
	Maximum Gate Source Voltage Vgs	30V
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Height	4.24mm
	Length	27.69mm
	Width	9.96mm
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 13A
	Maximum Drain Source Voltage Vds 800V
	Series E
	Package Type TO-220AB
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 304mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 53nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 156W
	Maximum Gate Source Voltage Vgs 30V
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Height 4.24mm
	Length 27.69mm
	Width 9.96mm
	Automotive Standard No

Datasheet - SIHP15N80AE

Vishay Series E Power MOSFET, 800V Drain Source Voltage, 13A Continuous Drain Current - SIHP15N80AE-GE3

This power MOSFET is a high-voltage N-channel switching device designed for through-hole mounting in power conversion and control circuits. It operates across a wide temperature span and is intended for applications requiring elevated voltage withstand, moderate continuous current capability and gate-driven enhancement-mode switching. The device is supplied in a TO-220AB package with three pins for conventional board or heatsink installation.

Features and Benefits:

• 800V drain-source rating enables high-voltage switching
• 13A continuous drain current supports sustained load delivery
• 304mΩ Rds(on) minimises conduction losses at switching
• 156W power dissipation allows significant thermal handling
• 53nC total gate charge keeps gate-drive requirements predictable
• 30V gate-source tolerance permits robust drive voltage margins

Applications

• Suitable for high-voltage power supplies and converters
• Used for snubber and clamp circuits in industrial inverters
• Ideal for switched-mode power stages in lighting controls
• Can be used for motor drive front ends with through-hole mounting
• Used with laboratory test rigs requiring elevated voltage handling

What ambient range can it tolerate in demanding installations?

It is specified to operate from -55°C up to 150°C, allowing use in both cold and high-temperature environments.

How is the component mounted for effective heat dissipation?

The TO-220AB package is designed for through-hole attachment and can be mounted to a heatsink for improved thermal performance.

What type of channel and conduction mode does it employ?

The device is an N-channel enhancement-mode MOSFET, requiring a positive gate drive to conduct.

Which electrical characteristic determines switching voltage drop?

The forward voltage parameter of 1.2V is indicative of the device’s conduction voltage behaviour during forward current flow.