onsemi NTH Type N-Channel MOSFET, 17.3 A, 1200 V Enhancement, 4-Pin TO-247 NTH4L160N120SC1
- RS 제품 번호:
- 202-5703
- 제조사 부품 번호:
- NTH4L160N120SC1
- 제조업체:
- onsemi
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대량 구매 할인 기용 가능
Subtotal (1 pack of 2 units)*
₩16,732.00
마지막 RS 재고
- 최종적인 430 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 2 - 112 | ₩8,366.00 | ₩16,732.00 |
| 114 - 224 | ₩8,140.40 | ₩16,280.80 |
| 226 + | ₩8,027.60 | ₩16,055.20 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 202-5703
- 제조사 부품 번호:
- NTH4L160N120SC1
- 제조업체:
- onsemi
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 17.3A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-247 | |
| Series | NTH | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 224mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 111W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Forward Voltage Vf | 4V | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 18.62mm | |
| Height | 22.74mm | |
| Width | 5.2 mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 17.3A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-247 | ||
Series NTH | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 224mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 111W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Forward Voltage Vf 4V | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 18.62mm | ||
Height 22.74mm | ||
Width 5.2 mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-4L
The ON Semiconductor Silicon Carbide Power MOSFET runs with 17.3 Ampere and 1200 Volts. It can be used in uninterruptible power supply, DC/DC Converter, boost inverter.
160mO drain to source on resistance
Ultra low gate charge
100% avalanche tested
Pb free
RoHS compliant
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